IRLH5030TRPBF vs BSZ031NE2LS5ATMA1 Comparison
Detailed side-by-side comparison of IRLH5030TRPBF by Infineon and BSZ031NE2LS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRLH5030TRPBF
IRLH5030TRPBF - 100V 13A N-Channel HEXFET MOSFET | Infineon
IRLH5030TRPBF β ActiveInfineon
BSZ031NE2LS5ATMA1 - 25V N-Ch 3.1mOhm OptiMOS 5 MOSFET | Infineon
BSZ031NE2LS5ATMA1 β ActiveSpecification Comparison
| Parameter | IRLH5030TRPBF | BSZ031NE2LS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.15 | $0.26 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies |
| Part Number | IRLH5030TRPBF | BSZ031NE2LS5ATMA1 |
| FET Type | N-Channel | β |
| Technology | IR MOSFET (HEXFET) | β |
| Drain-to-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) at TA=25C | 13 A | β |
| Continuous Drain Current (ID) at TC=25C | 100 A | β |
| On-Resistance RDS(on) max at VGS=10V | 9 mOhm | β |
| Total Gate Charge (Qg) | 44 nC | β |
| Gate Drive Voltage (optimized) | 10 V (capable of 4.5 V) | β |
| Power Dissipation at TA=25C | 3.6 W | β |
| Power Dissipation at TC=25C | 156 W | β |
| Thermal Resistance to PCB (RthJC) | 0.8 C/W | β |
| Package | PQFN-8 (SuperSO8 5x6 mm) | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) |
| Profile Height | β€ 0.9 mm | β |
| Mounting Type | Surface Mount | Surface Mount |
| Qualification | JEDEC standard | β |
| Rg Tested | 100% | β |
| RoHS Compliance | Compliant (Lead-free, Bromide-free, Halogen-free) | β |
| Industry-Standard Pinout | Yes | β |
| Technology / Platform | β | OptiMOS 5 25V/30V N-channel trench MOSFET |
| Drain-Source Voltage (VDS) max | β | 25 V |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max] |
| Continuous Drain Current (ID) at Ta=25C | β | 19 A |
| Continuous Drain Current (ID) at Tc=25C | β | 40 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM] |
| RDS(on) max @ VGS=10 V | β | 3.1 mOhm |
| RDS(on) typical @ VGS=4.5 V | β | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Power Dissipation at Ta=25C | β | 2.1 W |
| Power Dissipation at Tc=25C | β | 30 W |
| Operating Junction Temperature | β | -55 C to +150 C |
| MSL Level | β | [DATA_NEEDED: MSL] |
| RoHS Status | β | Compliant |
| Lead-Free | β | Yes |
| Halogen-Free | β | Yes |