IRLH5030TRPBF vs IRFH7084TRPBF Comparison
Detailed side-by-side comparison of IRLH5030TRPBF by Infineon and IRFH7084TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRLH5030TRPBF
IRLH5030TRPBF - 100V 13A N-Channel HEXFET MOSFET | Infineon
IRLH5030TRPBF β ActiveInfineon
IRFH7084TRPBF
IRFH7084TRPBF - 40V 100A N-Ch StrongIRFET PQFN | Infineon
IRFH7084TRPBF β ActiveSpecification Comparison
| Parameter | IRLH5030TRPBF | IRFH7084TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.15 | $0.45 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | β |
| Part Number | IRLH5030TRPBF | β |
| FET Type | N-Channel | N-Channel |
| Technology | IR MOSFET (HEXFET) | StrongIRFETβ’ (trench MOSFET) |
| Drain-to-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) at TA=25C | 13 A | β |
| Continuous Drain Current (ID) at TC=25C | 100 A | β |
| On-Resistance RDS(on) max at VGS=10V | 9 mOhm | β |
| Total Gate Charge (Qg) | 44 nC | β |
| Gate Drive Voltage (optimized) | 10 V (capable of 4.5 V) | β |
| Power Dissipation at TA=25C | 3.6 W | β |
| Power Dissipation at TC=25C | 156 W | β |
| Thermal Resistance to PCB (RthJC) | 0.8 C/W | β |
| Package | PQFN-8 (SuperSO8 5x6 mm) | 8-PQFN 5x6 mm (SuperSO8) |
| Profile Height | β€ 0.9 mm | β |
| Mounting Type | Surface Mount | Surface Mount |
| Qualification | JEDEC standard | β |
| Rg Tested | 100% | β |
| RoHS Compliance | Compliant (Lead-free, Bromide-free, Halogen-free) | β |
| Industry-Standard Pinout | Yes | β |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID, Tc=25Β°C, package-limited) | β | 100 A |
| Silicon-Limited Drain Current | β | 265 A |
| Power Dissipation (PD, Tc=25Β°C) | β | 156 W |
| On-Resistance RDS(on) max @ VGS=10V | β | 1.25 mΞ© |
| On-Resistance RDS(on) typ @ VGS=10V | β | 0.95 mΞ© |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Gate Threshold Voltage VGS(th) typ | β | 1.7 V to 2.7 V |
| Input Capacitance (Ciss) max @ 25V | β | 6560 pF |
| Operating Temperature Range | β | -55Β°C to +175Β°C (TJ) |
| MSL Level | β | 1 |
| RoHS Status | β | Compliant |
| Halogen Free | β | Compliant |
| RthJC max | β | 0.96 Β°C/W (per datasheet) |