IRLL024ZTRPBF vs IRF8734TRPBF Comparison

Detailed side-by-side comparison of IRLL024ZTRPBF by Infineon and IRF8734TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRLL024ZTRPBF IRF8734TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.46 $0.48
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Technology HEXFET Power MOSFET (trench-gate) StrongIRFETβ„’ (HEXFET)
FET Type N-Channel enhancement-mode β€”
Drain-Source Voltage (VDS) max 55 V β€”
Gate-Source Voltage (VGS) max Β±16 V β€”
Continuous Drain Current (ID) at TC=25Β°C 5 A β€”
Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V 60 mΞ© β€”
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.5 V (logic-level, drives from 3.3 V GPIO) β€”
Total Gate Charge (Qg) typical 7 nC β€”
Power Dissipation (PD) at TA=25Β°C 1 W β€”
Operating Junction Temperature (TJ) -55 Β°C to +150 Β°C β€”
Package SOT-223 (TO-261-4) β€”
Mounting Type Surface Mount Surface Mount
MSL Level 1 (unlimited floor life) [DATA_NEEDED: MSL rating per J-STD-020]
RoHS Status Compliant Compliant (PBF suffix)
Transistor Type β€” N-Channel MOSFET
Drain-Source Voltage (VDS) β€” 30 V
Continuous Drain Current (ID) at Ta β€” 21 A
On-Resistance RDS(on) max at VGS=10V β€” 3.5 mOhm
Gate Charge (Qg) typ β€” 20 nC
Power Dissipation (PD) at Ta β€” 2.5 W
Package / Case β€” 8-SOIC (SO-8)
Operating Temperature Range β€” -55C to +150C (junction)
Gate-Source Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical and min/max]
Avalanche Energy Rating β€” Fully characterized avalanche voltage
Lead-Free / Halogen-Free β€” Lead-free (PBF suffix)
Packaging β€” Tape & Reel (TR)

Datasheets & Resources

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