IRLL024ZTRPBF vs IRLR024NTRPBF Comparison

Detailed side-by-side comparison of IRLL024ZTRPBF by Infineon and IRLR024NTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRLR024NTRPBF IRLR024NTRPBF - 55V 17A N-Channel HEXFET MOSFET | Infineon

IRLR024NTRPBF - 55V 17A N-Channel HEXFET MOSFET | Infineon

IRLR024NTRPBF βœ“ Active

Specification Comparison

Parameter IRLL024ZTRPBF IRLR024NTRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.46 $0.46
Manufacturer Infineon Technologies (formerly International Rectifier) β€”
Technology HEXFET Power MOSFET (trench-gate) HEXFET (Advanced Process Technology)
FET Type N-Channel enhancement-mode N-Channel MOSFET, Metal Oxide
Drain-Source Voltage (VDS) max 55 V β€”
Gate-Source Voltage (VGS) max Β±16 V β€”
Continuous Drain Current (ID) at TC=25Β°C 5 A β€”
Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V 60 mΞ© β€”
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.5 V (logic-level, drives from 3.3 V GPIO) β€”
Total Gate Charge (Qg) typical 7 nC β€”
Power Dissipation (PD) at TA=25Β°C 1 W β€”
Operating Junction Temperature (TJ) -55 Β°C to +150 Β°C β€”
Package SOT-223 (TO-261-4) TO-252AA (DPAK)
Mounting Type Surface Mount Surface Mount
MSL Level 1 (unlimited floor life) 1 (per JEDEC J-STD-020)
RoHS Status Compliant β€”
Drain-to-Source Voltage (Vdss) β€” 55 V
Continuous Drain Current (Id) at Tc=25C β€” 17 A
Continuous Drain Current (Id) at Tc=100C β€” [DATA_NEEDED: Id at Tc=100C]
Rds(on) Max @ Vgs=10V β€” 65 mOhm
Gate Threshold Voltage (Vgs(th)) β€” 1.0 V to 2.0 V
Total Gate Charge (Qg) β€” 10 nC (typical)
Power Dissipation (Pd) at Tc=25C β€” 45 W
Operating Temperature Range β€” -55 C to +175 C
Avalanche Rated β€” Yes (fully avalanche rated)
Gate Drive Level β€” Logic-Level
Lead-Free / RoHS β€” Lead-Free / RoHS Compliant

Datasheets & Resources

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