IRLML0030TRPBF vs IRLML2060TRPBF Comparison
Detailed side-by-side comparison of IRLML0030TRPBF by Infineon and IRLML2060TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLML0030TRPBF | IRLML2060TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.13 | $0.13 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID) at TA=25C | 5.3 A | 1.2 A |
| Drain-Source On-Resistance (RDS(on)) max | 27 mOhm at VGS=4.5V | β |
| Gate-Source Threshold Voltage (VGS(th)) | Logic-level (5 V optimized) | β |
| Total Gate Charge (Qg) | 3.6 nC typical | β |
| Power Dissipation (PD) at TA=25C | 1.3 W | 1.25 W |
| Operating Temperature Range | -55C to +150C | β |
| Package | Micro3 / SOT-23 (3-pin) | SOT-23 (Micro3, 3-pin) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | IR HEXFET Power MOSFET | IR HEXFET (Trench Gate) |
| MSL Level | 1 (unlimited floor life per JEDEC J-STD-020) | MSL1 |
| Soldering | Wave-solder capable | β |
| Qualification | JEDEC standard | β |
| RoHS Status | Compliant | Compliant |
| Drain-to-Source Voltage (VDS) | β | 60 V |
| Pulsed Drain Current (IDM) | β | 4.8 A |
| Gate-to-Source Voltage (VGS) max | β | +/- 12 V |
| Gate Threshold Voltage (VGS(th)) | β | 1.8 V typical |
| RDS(on) max at VGS=10V | β | 480 mOhm |
| RDS(on) max at VGS=4.5V | β | 650 mOhm (typical 580 mOhm) |
| Thermal Resistance Junction-to-Ambient (RthetaJA) | β | 100 C/W |
| Operating Junction Temperature | β | -55C to +150C |
| Halogen-Free | β | Yes |