IRLML0030TRPBF vs IRLML5103TRPBF Comparison
Detailed side-by-side comparison of IRLML0030TRPBF by Infineon and IRLML5103TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLML0030TRPBF | IRLML5103TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.13 | $0.05 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID) at TA=25C | 5.3 A | β |
| Drain-Source On-Resistance (RDS(on)) max | 27 mOhm at VGS=4.5V | β |
| Gate-Source Threshold Voltage (VGS(th)) | Logic-level (5 V optimized) | β |
| Total Gate Charge (Qg) | 3.6 nC typical | β |
| Power Dissipation (PD) at TA=25C | 1.3 W | β |
| Operating Temperature Range | -55C to +150C | β |
| Package | Micro3 / SOT-23 (3-pin) | Micro3/SOT-23 |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | IR HEXFET Power MOSFET | IR MOSFET |
| MSL Level | 1 (unlimited floor life per JEDEC J-STD-020) | β |
| Soldering | Wave-solder capable | β |
| Qualification | JEDEC standard | β |
| RoHS Status | Compliant | Compliant |
| Transistor Type | β | P-Channel MOSFET |
| Maximum Drain-Source Voltage | β | 30 V |
| Continuous Drain Current | β | 760 mA at Ta |
| Power Dissipation | β | 540 mW at Ta |
| Maximum On-Resistance | β | 600 mOhm |
| Gate Charge | β | 3.4 nC |
| Polarity | β | P-Channel |
| Drain-Source Voltage Rating | β | -30 V |
| Channel Mode | β | Enhancement |
| Operating Temperature | β | 175 C |
| Footprint | β | SOT-23 |