IRLML0030TRPBF vs IRLML6346TRPBF Comparison
Detailed side-by-side comparison of IRLML0030TRPBF by Infineon and IRLML6346TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLML0030TRPBF | IRLML6346TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.13 | $0.18 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 5.3 A | β |
| Drain-Source On-Resistance (RDS(on)) max | 27 mOhm at VGS=4.5V | β |
| Gate-Source Threshold Voltage (VGS(th)) | Logic-level (5 V optimized) | β |
| Total Gate Charge (Qg) | 3.6 nC typical | β |
| Power Dissipation (PD) at TA=25C | 1.3 W | β |
| Operating Temperature Range | -55C to +150C | β |
| Package | Micro3 / SOT-23 (3-pin) | Micro3 / SOT-23 |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | IR HEXFET Power MOSFET | HEXFET Power MOSFET |
| MSL Level | 1 (unlimited floor life per JEDEC J-STD-020) | 1 |
| Soldering | Wave-solder capable | β |
| Qualification | JEDEC standard | β |
| RoHS Status | Compliant | Compliant |
| Polarity | β | N-Channel |
| Continuous Drain Current (ID) | β | 3.4 A (TA=25C) |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| RDS(on) max @ VGS=2.5V | β | 63 mOhm |
| RDS(on) max @ VGS=4.5V | β | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) value] |
| Gate Drive Capability | β | 2.5V logic-level |
| Maximum Power Dissipation (PD) | β | 1.3 W (TA=25C, 1in2 FR4) |
| Operating Junction Temperature | β | -55C to +150C |
| Lead-Free Finish | β | Yes (PBF suffix) |