IRLML5103TRPBF vs IRLML6346TRPBF Comparison
Detailed side-by-side comparison of IRLML5103TRPBF by Infineon and IRLML6346TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLML5103TRPBF | IRLML6346TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.05 | $0.18 |
| Transistor Type | P-Channel MOSFET | β |
| Maximum Drain-Source Voltage | 30 V | β |
| Continuous Drain Current | 760 mA at Ta | β |
| Power Dissipation | 540 mW at Ta | β |
| Maximum On-Resistance | 600 mOhm | β |
| Gate Charge | 3.4 nC | β |
| Technology | IR MOSFET | HEXFET Power MOSFET |
| Package | Micro3/SOT-23 | Micro3 / SOT-23 |
| Mounting Type | Surface Mount | Surface Mount |
| Polarity | P-Channel | N-Channel |
| Drain-Source Voltage Rating | -30 V | β |
| Channel Mode | Enhancement | β |
| Operating Temperature | 175 C | β |
| RoHS Status | Compliant | Compliant |
| Footprint | SOT-23 | β |
| Drain-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID) | β | 3.4 A (TA=25C) |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| RDS(on) max @ VGS=2.5V | β | 63 mOhm |
| RDS(on) max @ VGS=4.5V | β | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) value] |
| Gate Drive Capability | β | 2.5V logic-level |
| Maximum Power Dissipation (PD) | β | 1.3 W (TA=25C, 1in2 FR4) |
| Operating Junction Temperature | β | -55C to +150C |
| MSL Level | β | 1 |
| Lead-Free Finish | β | Yes (PBF suffix) |