IRLML6346TRPBF vs BSS306NH6327XTSA1 Comparison
Detailed side-by-side comparison of IRLML6346TRPBF by Infineon and BSS306NH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLML6346TRPBF | BSS306NH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.18 | $0.14 |
| Polarity | N-Channel | β |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) | 3.4 A (TA=25C) | 2.3 A (Ta) |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| RDS(on) max @ VGS=2.5V | 63 mOhm | β |
| RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | [DATA_NEEDED: typical VGS(th) in V] |
| Gate Drive Capability | 2.5V logic-level | β |
| Maximum Power Dissipation (PD) | 1.3 W (TA=25C, 1in2 FR4) | β |
| Operating Junction Temperature | -55C to +150C | β |
| Package | Micro3 / SOT-23 | SOT-23 (PG-SOT23), 3-pin |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | HEXFET Power MOSFET | MOSFET (Metal Oxide) |
| MSL Level | 1 | β |
| Lead-Free Finish | Yes (PBF suffix) | β |
| RoHS Status | Compliant | β |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | BSS306NH6327XTSA1 |
| Part Family | β | BSS306N (OptiMOS Small Signal) |
| FET Type | β | N-Channel |
| Power Dissipation (PD) | β | 500 mW (Ta) |
| RDS(on) max | β | [DATA_NEEDED: exact RDS(on) max value in mΞ©] |
| Gate-Source Voltage (VGS) | β | [DATA_NEEDED: VGS max in V] |
| Operating Temperature | β | -55Β°C to +150Β°C (TJ) |
| Qualification | β | AEC-Q101 (Automotive) |
| Lead Plating | β | Pb-free (RoHS compliant) |
| Configuration | β | Single N-Channel, 3-pin |