IRLML6346TRPBF vs BSS308PEH6327XTSA1 Comparison

Detailed side-by-side comparison of IRLML6346TRPBF by Infineon and BSS308PEH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRLML6346TRPBF IRLML6346TRPBF - 30V 3.4A N-Ch HEXFET MOSFET | Infineon

IRLML6346TRPBF - 30V 3.4A N-Ch HEXFET MOSFET | Infineon

IRLML6346TRPBF βœ“ Active

Specification Comparison

Parameter IRLML6346TRPBF BSS308PEH6327XTSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.18 $0.11
Polarity N-Channel β€”
Drain-Source Voltage (VDS) 30 V -30 V
Continuous Drain Current (ID) 3.4 A (TA=25C) -2 A (Ta)
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] β€”
RDS(on) max @ VGS=2.5V 63 mOhm β€”
RDS(on) max @ VGS=4.5V [DATA_NEEDED: RDS(on) at VGS=4.5V] β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] [DATA_NEEDED: gate threshold voltage]
Gate Drive Capability 2.5V logic-level β€”
Maximum Power Dissipation (PD) 1.3 W (TA=25C, 1in2 FR4) β€”
Operating Junction Temperature -55C to +150C β€”
Package Micro3 / SOT-23 β€”
Mounting Type Surface Mount Surface Mount
Technology HEXFET Power MOSFET β€”
MSL Level 1 β€”
Lead-Free Finish Yes (PBF suffix) β€”
RoHS Status Compliant Compliant
Manufacturer β€” Infineon Technologies
Part Family β€” OptiMOS P (small signal / small power MOSFET)
Transistor Type β€” P-Channel Enhancement Mode MOSFET
RDS(on) Max β€” 80 mΞ© at VGS = -10 V
Gate-Source Voltage (VGS) Max β€” +/-20 V
Power Dissipation (PD) β€” 500 mW (Ta)
Operating Temperature Range β€” -55 Β°C to +150 Β°C
Package / Case β€” PG-SOT23 (SOT-23-3)
Number of Pins β€” 3
Qualification β€” AEC-Q101 Automotive
Packaging β€” Tape & Reel (T/R)
Standard Reel Quantity β€” 3000 pcs

Datasheets & Resources

Browse All Products Create BOM Request Quote