IRLML6346TRPBF vs BSS316NH6327XTSA1 Comparison

Detailed side-by-side comparison of IRLML6346TRPBF by Infineon and BSS316NH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRLML6346TRPBF IRLML6346TRPBF - 30V 3.4A N-Ch HEXFET MOSFET | Infineon

IRLML6346TRPBF - 30V 3.4A N-Ch HEXFET MOSFET | Infineon

IRLML6346TRPBF βœ“ Active
Infineon
BSS316NH6327XTSA1 BSS316NH6327XTSA1 - 30V N-Ch 1.4A OptiMOS 2 MOSFET | Infineon

BSS316NH6327XTSA1 - 30V N-Ch 1.4A OptiMOS 2 MOSFET | Infineon

BSS316NH6327XTSA1 βœ“ Active

Specification Comparison

Parameter IRLML6346TRPBF BSS316NH6327XTSA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.18 $0.13
Polarity N-Channel β€”
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) 3.4 A (TA=25C) β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
RDS(on) max @ VGS=2.5V 63 mOhm β€”
RDS(on) max @ VGS=4.5V [DATA_NEEDED: RDS(on) at VGS=4.5V] β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] β€”
Gate Drive Capability 2.5V logic-level β€”
Maximum Power Dissipation (PD) 1.3 W (TA=25C, 1in2 FR4) β€”
Operating Junction Temperature -55C to +150C β€”
Package Micro3 / SOT-23 PG-SOT23 (SOT-23-3)
Mounting Type Surface Mount Surface Mount
Technology HEXFET Power MOSFET OptiMOS 2 (Trench)
MSL Level 1 MSL1 (per JEDEC J-STD-020)
Lead-Free Finish Yes (PBF suffix) β€”
RoHS Status Compliant Compliant
FET Type β€” N-Channel, Enhancement Mode
Continuous Drain Current (ID) at TA=25C β€” 1.4 A
Drain-Source On-Resistance RDS(on) max β€” 160 mOhm at VGS=10V, ID=1.4A
Gate-Source Threshold Voltage VGS(th) typ β€” 2 V at ID=3.7 uA
Total Gate Charge (Qg) β€” 600 pC at VGS=5 V
Input Capacitance (Ciss) β€” 94 pF at VDS=15 V
Output Capacitance (Coss) β€” [DATA_NEEDED: output capacitance]
Reverse Transfer Capacitance (Crss) β€” [DATA_NEEDED: reverse transfer capacitance]
Maximum Power Dissipation (PD) at TA=25C β€” 500 mW
Operating Junction Temperature Range β€” -55 C to +150 C
Lead Plating β€” Pb-free (Matte Tin)
Automotive Qualification β€” AEC-Q101 qualified

Datasheets & Resources

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