IRLML6346TRPBF vs IRLHS6242TRPBF Comparison
Detailed side-by-side comparison of IRLML6346TRPBF by Infineon and IRLHS6242TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLML6346TRPBF | IRLHS6242TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.18 | $0.12 |
| Polarity | N-Channel | β |
| Drain-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID) | 3.4 A (TA=25C) | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| RDS(on) max @ VGS=2.5V | 63 mOhm | β |
| RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | β |
| Gate Drive Capability | 2.5V logic-level | β |
| Maximum Power Dissipation (PD) | 1.3 W (TA=25C, 1in2 FR4) | β |
| Operating Junction Temperature | -55C to +150C | β |
| Package | Micro3 / SOT-23 | 6-PQFN (2x2) / DFN2020 with exposed pad |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | HEXFET Power MOSFET | HEXFET (trench MOSFET) |
| MSL Level | 1 | β |
| Lead-Free Finish | Yes (PBF suffix) | β |
| RoHS Status | Compliant | β |
| FET Type | β | N-Channel |
| Drain-to-Source Voltage (VDS) | β | 20 V |
| Gate-to-Source Voltage (VGS) | β | Β±12 V |
| Continuous Drain Current (TA) | β | 10 A |
| Continuous Drain Current (TC) | β | 12 A |
| On-Resistance RDS(on) max @ VGS=4.5V | β | 11.7 mΞ© |
| Total Gate Charge (Qg) | β | 14 nC |
| Power Dissipation (TA) | β | 1.98 W |
| Power Dissipation (TC) | β | 9.6 W |
| Operating Temperature | β | -55Β°C to +150Β°C |
| Gate Drive Level | β | Logic-level (4.5V); 2.5V-capable |
| Qualification | β | JEDEC standard |