IRLR120NTRPBF vs IRFR220NPBF Comparison

Detailed side-by-side comparison of IRLR120NTRPBF by Infineon and IRFR220NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRLR120NTRPBF IRLR120NTRPBF - 100V N-Channel HEXFET MOSFET | Infineon

IRLR120NTRPBF - 100V N-Channel HEXFET MOSFET | Infineon

IRLR120NTRPBF βœ“ Active

Specification Comparison

Parameter IRLR120NTRPBF IRFR220NPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.27 $0.74
FET Type N-Channel MOSFET N-Channel MOSFET, Metal Oxide
Technology HEXFET (Fifth Generation, planar) HEXFET (Planar)
Drain-to-Source Voltage (Vdss) 100 V β€”
Continuous Drain Current (Id) at Tc=25C 10 A β€”
Continuous Drain Current (Id) at Tc=100C [DATA_NEEDED: Id at Tc=100C] β€”
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed Idm] β€”
Rds(on) Max at Vgs=10V 185 mΞ© β€”
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: typical Vgs(th)] β€”
Total Gate Charge (Qg) 13.3 nC [DATA_NEEDED: total gate charge]
Power Dissipation (Pd) at Tc=25C 48 W β€”
Operating Temperature Range -55C to +175C (junction) -55C to +150C (junction)
Package TO-252AA (DPAK), 3-pin surface mount β€”
Mounting Type Surface Mount Surface Mount
Avalanche Energy Rating Fully avalanche rated β€”
Lead-Free / RoHS Yes (PBF suffix indicates lead-free) Yes, lead-free (PBF suffix)
MSL Level 1 1 (per JEDEC J-STD-020)
Drain-to-Source Voltage (VDS) β€” 200 V
Continuous Drain Current (ID) at TC=25C β€” 5 A
Power Dissipation (PD) at TC=25C β€” 43 W
Static Drain-Source On-Resistance (RDS(on)) max β€” 0.6 ohm at VGS = 10 V
Package / Case β€” TO-252AA (DPAK)
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: gate threshold voltage]
Avalanche Energy Rated β€” Yes (per datasheet characterization)
Pin Count β€” 3 (Gate, Drain, Source) plus tab

Datasheets & Resources

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