IRLR120NTRPBF vs IRFR220NTRPBF Comparison

Detailed side-by-side comparison of IRLR120NTRPBF by Infineon and IRFR220NTRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRLR120NTRPBF IRLR120NTRPBF - 100V N-Channel HEXFET MOSFET | Infineon

IRLR120NTRPBF - 100V N-Channel HEXFET MOSFET | Infineon

IRLR120NTRPBF βœ“ Active
Infineon
IRFR220NTRPBF IRFR220NTRPBF - 200V 5A N-Channel HEXFET MOSFET | Infineon

IRFR220NTRPBF - 200V 5A N-Channel HEXFET MOSFET | Infineon

IRFR220NTRPBF βœ“ Active

Specification Comparison

Parameter IRLR120NTRPBF IRFR220NTRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.27 $0.22
FET Type N-Channel MOSFET N-Channel MOSFET
Technology HEXFET (Fifth Generation, planar) HEXFET (IR MOSFET)
Drain-to-Source Voltage (Vdss) 100 V β€”
Continuous Drain Current (Id) at Tc=25C 10 A β€”
Continuous Drain Current (Id) at Tc=100C [DATA_NEEDED: Id at Tc=100C] β€”
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed Idm] β€”
Rds(on) Max at Vgs=10V 185 mΞ© β€”
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: typical Vgs(th)] β€”
Total Gate Charge (Qg) 13.3 nC 15 nC (typical per Mouser listing)
Power Dissipation (Pd) at Tc=25C 48 W β€”
Operating Temperature Range -55C to +175C (junction) β€”
Package TO-252AA (DPAK), 3-pin surface mount TO-252AA (DPAK), surface mount
Mounting Type Surface Mount Surface Mount
Avalanche Energy Rating Fully avalanche rated β€”
Lead-Free / RoHS Yes (PBF suffix indicates lead-free) β€”
MSL Level 1 1 (unlimited floor life per JEDEC J-STD-020)
Drain-to-Source Voltage (VDS) β€” 200 V
Continuous Drain Current (ID) at TC=25Β°C β€” 5 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) max β€” [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical]
On-Resistance Rds(on) max at VGS=10V β€” 600 milliohm
Maximum Power Dissition (PD) at TC=25Β°C β€” 43 W
Operating Junction Temperature β€” -55Β°C to +150Β°C
RoHS Status β€” Compliant (PBF suffix)
Avalanche Energy Rated β€” Yes (fully characterized)
Lead-Free β€” Yes (PBF suffix indicates Pb-free plating)

Datasheets & Resources

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