IRLR2705TRLPBF vs IRFR5305TRPBF Comparison
Detailed side-by-side comparison of IRLR2705TRLPBF by Infineon and IRFR5305TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLR2705TRLPBF | IRFR5305TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.32 | $0.32 |
| Transistor Type | N-Channel MOSFET (HexFET) | β |
| Drain-Source Voltage (VDS) | 55 V | β |
| Continuous Drain Current (ID) at TC=25C | 28 A | 31 A |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | 40 mOhm | β |
| Gate-Source Threshold Voltage (VGS(th)) | 1.0 V to 2.0 V (logic-level) | -2 V to -4 V |
| Gate-Source Voltage (VGS) max | 20 V | β |
| Power Dissipation (PD) at TC=25C | 68 W | 110 W |
| Operating Temperature Range | -55C to +175C | -55 C to +175 C |
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Avalanche Rated | Yes (fully avalanche rated) | β |
| Lead-Free / RoHS Status | Lead-Free, RoHS Compliant | β |
| Technology | IR MOSFET (HEXFET, 5th generation) | HEXFET (IR MOSFET) |
| Configuration | Single N-Channel | β |
| MSL Level | 1 (unlimited floor life at <30C / 85% RH) | 1 |
| Polarity | β | P-Channel |
| Drain-Source Voltage (VDS) Max | β | -55 V |
| Continuous Drain Current (ID) at TC=100C | β | [DATA_NEEDED: ID at TC=100C] |
| On-Resistance (RDS(on)) Max at VGS=-10V | β | 65 mOhm |
| Gate Charge (Qg) Typ | β | [DATA_NEEDED: Qg typ] |
| Single-Pulse Avalanche Energy (EAS) | β | 270 mJ |
| RoHS Status | β | Compliant (Pb-free PBF suffix) |
| Lead-Free Finish | β | Yes (PBF suffix) |