IRLR2905TRPBF vs IRLR2705TRLPBF Comparison

Detailed side-by-side comparison of IRLR2905TRPBF by Infineon and IRLR2705TRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRLR2905TRPBF IRLR2905TRPBF - 55V 42A N-Channel HEXFET MOSFET | Infineon

IRLR2905TRPBF - 55V 42A N-Channel HEXFET MOSFET | Infineon

IRLR2905TRPBF βœ“ Active

Specification Comparison

Parameter IRLR2905TRPBF IRLR2705TRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.61 $0.32
FET Type N-Channel MOSFET β€”
Technology HEXFET (IR MOSFET, fifth generation) IR MOSFET (HEXFET, 5th generation)
Drain-to-Source Voltage (VDS) 55 V β€”
Continuous Drain Current (ID) at Tc=25C 42 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] β€”
On-Resistance RDS(on) max @ VGS=10V 27 mOhm β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] β€”
Gate Charge (Qg) 32 nC β€”
Power Dissipation (PD) at Tc=25C 110 W β€”
Operating Junction Temperature -55C to +175C β€”
Package TO-252AA (DPAK), surface mount TO-252AA (DPAK)
Mounting Type Surface Mount Surface Mount
Avalanche Rated Yes Yes (fully avalanche rated)
Lead-Free / RoHS Yes / Compliant β€”
MSL Level [DATA_NEEDED: MSL rating] 1 (unlimited floor life at <30C / 85% RH)
Gate Drive Logic-level compatible β€”
Transistor Type β€” N-Channel MOSFET (HexFET)
Drain-Source Voltage (VDS) β€” 55 V
Continuous Drain Current (ID) at TC=25C β€” 28 A
Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V β€” 40 mOhm
Gate-Source Threshold Voltage (VGS(th)) β€” 1.0 V to 2.0 V (logic-level)
Gate-Source Voltage (VGS) max β€” 20 V
Power Dissipation (PD) at TC=25C β€” 68 W
Operating Temperature Range β€” -55C to +175C
Lead-Free / RoHS Status β€” Lead-Free, RoHS Compliant
Configuration β€” Single N-Channel

Datasheets & Resources

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