IRLR2908TRPBF vs IRLB4030PBF Comparison

Detailed side-by-side comparison of IRLR2908TRPBF by Infineon and IRLB4030PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRLR2908TRPBF IRLB4030PBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.55 $3.10
Transistor Type N-Channel MOSFET N-Channel MOSFET
Technology HEXFET (IR MOSFET) HEXFET (StrongIRFET family)
Drain-Source Voltage (Vds) 80 V β€”
Continuous Drain Current (Id) at Tc=25C 30 A β€”
Pulsed Drain Current (Idm) [DATA_NEEDED: Idm pulsed value] β€”
On-Resistance RDS(on) max @ Vgs=10V 28 mOhm β€”
On-Resistance RDS(on) typ @ Vgs=10V 22.5 mOhm β€”
Gate Charge (Qg) typ 22 nC β€”
Power Dissipation (Pd) at Tc=25C 120 W β€”
Operating Junction Temperature -55C to +175C β€”
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) range] β€”
Package TO-252AA (DPAK), surface mount TO-220AB
Mounting Type Surface Mount Through Hole
Configuration Single with built-in diode β€”
Lead-Free / RoHS Yes (PBF suffix indicates lead-free) β€”
Drain-to-Source Voltage (VDS) β€” 100 V
Continuous Drain Current (ID) at Tc β€” 180 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current value]
On-Resistance RDS(on) max at VGS=10V β€” 4.3 mOhm
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: gate threshold voltage]
Total Gate Charge (Qg) β€” 87 nC
Gate-to-Source Voltage (VGS) max β€” [DATA_NEEDED: VGS absolute maximum, typical +/- 20 V]
Power Dissipation (PD) at Tc β€” 370 W
Operating Temperature Range β€” -55C to +175C
Logic Level Drive β€” Yes (optimized for 4.5 V to 10 V VGS)
Qualification β€” JEDEC
RoHS Status β€” Compliant

Datasheets & Resources

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