IRLR3110ZTRPBF vs IRLR3110ZTRLPBF Comparison
Detailed side-by-side comparison of IRLR3110ZTRPBF by Infineon and IRLR3110ZTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLR3110ZTRPBF | IRLR3110ZTRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.66 | $0.65 |
| FET Type | N-Channel | β |
| Drain-to-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) at TC=25C | 42 A | β |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | β |
| RDS(on) max @ VGS=10V | 14 mOhm | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | β |
| Total Gate Charge (Qg) | 15 nC | β |
| Power Dissipation (PD) at TC=25C | 140 W | β |
| Operating Junction Temperature | -55C to +175C | -55C to +175C |
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | HEXFET / Trench MOSFET | IR HEXFET / Trench MOSFET |
| MSL Level | 1 (Unlimited) | [DATA_NEEDED: MSL Level] |
| RoHS Status | Compliant | Compliant (PBF suffix) |
| Lead-Free Plating | Yes (PBF suffix) | β |
| Halogen-Free | Yes | β |
| Transistor Polarity | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID) at TC | β | 42 A |
| Maximum Drain Current (ID max) | β | 63 A |
| On-Resistance (RDS(on) max) | β | 14 mOhm |
| Gate Charge (Qg) | β | 34 nC |
| Gate Drive Level | β | Logic-Level |
| Power Dissipation (PD) at TC | β | 140 W |
| Pin Count | β | 3 (Drain, Gate, Source + Tab) |
| Repetitive Avalanche Rated | β | Yes |