IRLR3114ZTRPBF vs IRL540NSTRLPBF Comparison
Detailed side-by-side comparison of IRLR3114ZTRPBF by Infineon and IRL540NSTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLR3114ZTRPBF | IRL540NSTRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.46 | $0.51 |
| Transistor Type | N-Channel MOSFET | β |
| Technology | HEXFET (IR MOSFET) | β |
| Drain-Source Voltage (VDS) | 40 V | 100 V |
| Continuous Drain Current (ID, Tc=25 C) | 42 A | β |
| Continuous Drain Current (ID, Tc=100 C) | 30 A | β |
| Pulsed Drain Current (IDM) | 130 A | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | 16 V | Β±16 V |
| Gate Threshold Voltage (VGS(th)) | 2.5 V (typ) | Logic-level |
| On-Resistance RDS(on) max @ VGS=10V | 4.5 mOhm | β |
| On-Resistance RDS(on) @ VGS=4.5V | 4.9 mOhm | β |
| Total Gate Charge (Qg) | 40 nC @ VGS=4.5 V | 49.3 nC |
| Input Capacitance (Ciss) | 3.81 nF | β |
| Power Dissipation (Pd, Tc=25 C) | 140 W | β |
| Operating Junction Temperature | -55 C to +175 C | β |
| Package | TO-252AA (DPAK) surface mount | TO-263 (D2PAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Pins | 3 (2 + tab) | β |
| RoHS Status | Compliant | Compliant (LPBF suffix indicates lead-free) |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID) at Tc=25Β°C | β | 36 A |
| On-Resistance (RDS(on)) max @ VGS=10V | β | 44 mΞ© |
| On-Resistance (RDS(on)) max @ VGS=5V | β | [DATA_NEEDED: RDS(on) at VGS=5V] |
| Power Dissipation (PD) at Tc=25Β°C | β | 140 W |
| Power Dissipation (PD) at TA=25Β°C | β | 3.8 W |
| Operating Temperature Range | β | -55Β°C to +175Β°C |
| Avalanche Energy Rated | β | Yes (single-pulse) |
| MSL Level | β | [DATA_NEEDED: MSL rating] |