IRLR3114ZTRPBF vs IRLR2908TRPBF Comparison

Detailed side-by-side comparison of IRLR3114ZTRPBF by Infineon and IRLR2908TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRLR3114ZTRPBF IRLR2908TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.46 $0.55
Transistor Type N-Channel MOSFET N-Channel MOSFET
Technology HEXFET (IR MOSFET) HEXFET (IR MOSFET)
Drain-Source Voltage (VDS) 40 V β€”
Continuous Drain Current (ID, Tc=25 C) 42 A β€”
Continuous Drain Current (ID, Tc=100 C) 30 A β€”
Pulsed Drain Current (IDM) 130 A β€”
Gate-Source Voltage (VGS) max 16 V β€”
Gate Threshold Voltage (VGS(th)) 2.5 V (typ) β€”
On-Resistance RDS(on) max @ VGS=10V 4.5 mOhm β€”
On-Resistance RDS(on) @ VGS=4.5V 4.9 mOhm β€”
Total Gate Charge (Qg) 40 nC @ VGS=4.5 V β€”
Input Capacitance (Ciss) 3.81 nF β€”
Power Dissipation (Pd, Tc=25 C) 140 W β€”
Operating Junction Temperature -55 C to +175 C -55C to +175C
Package TO-252AA (DPAK) surface mount TO-252AA (DPAK), surface mount
Mounting Type Surface Mount Surface Mount
Number of Pins 3 (2 + tab) β€”
RoHS Status Compliant β€”
Drain-Source Voltage (Vds) β€” 80 V
Continuous Drain Current (Id) at Tc=25C β€” 30 A
Pulsed Drain Current (Idm) β€” [DATA_NEEDED: Idm pulsed value]
On-Resistance RDS(on) max @ Vgs=10V β€” 28 mOhm
On-Resistance RDS(on) typ @ Vgs=10V β€” 22.5 mOhm
Gate Charge (Qg) typ β€” 22 nC
Power Dissipation (Pd) at Tc=25C β€” 120 W
Gate Threshold Voltage (Vgs(th)) β€” [DATA_NEEDED: Vgs(th) range]
Configuration β€” Single with built-in diode
Lead-Free / RoHS β€” Yes (PBF suffix indicates lead-free)

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