IRLR3114ZTRPBF vs IRLR7843TRPBF Comparison

Detailed side-by-side comparison of IRLR3114ZTRPBF by Infineon and IRLR7843TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRLR7843TRPBF IRLR7843TRPBF - 30V 161A N-Ch HEXFET MOSFET | Infineon

IRLR7843TRPBF - 30V 161A N-Ch HEXFET MOSFET | Infineon

IRLR7843TRPBF βœ“ Active

Specification Comparison

Parameter IRLR3114ZTRPBF IRLR7843TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.46 $0.48
Transistor Type N-Channel MOSFET β€”
Technology HEXFET (IR MOSFET) HEXFET
Drain-Source Voltage (VDS) 40 V β€”
Continuous Drain Current (ID, Tc=25 C) 42 A β€”
Continuous Drain Current (ID, Tc=100 C) 30 A β€”
Pulsed Drain Current (IDM) 130 A β€”
Gate-Source Voltage (VGS) max 16 V β€”
Gate Threshold Voltage (VGS(th)) 2.5 V (typ) β€”
On-Resistance RDS(on) max @ VGS=10V 4.5 mOhm β€”
On-Resistance RDS(on) @ VGS=4.5V 4.9 mOhm β€”
Total Gate Charge (Qg) 40 nC @ VGS=4.5 V 34 nC
Input Capacitance (Ciss) 3.81 nF β€”
Power Dissipation (Pd, Tc=25 C) 140 W β€”
Operating Junction Temperature -55 C to +175 C β€”
Package TO-252AA (DPAK) surface mount TO-252AA (DPAK)
Mounting Type Surface Mount Surface Mount
Number of Pins 3 (2 + tab) β€”
RoHS Status Compliant β€”
Polarity β€” N-Channel
Drain-Source Voltage (Vdss) β€” 30 V
Continuous Drain Current (Id) @ Tc=25C β€” 161 A
Power Dissipation (Pd) @ Tc=25C β€” 140 W
On-Resistance Rds(on) Max @ Vgs=10V β€” 3.3 mOhm
On-Resistance Rds(on) Max @ Vgs=4.5V β€” 4.5 mOhm (typ)
Gate Threshold Voltage (Vgs(th)) β€” [DATA_NEEDED: gate threshold voltage]
Gate-to-Source Voltage Max β€” Β±20 V
Avalanche Energy (Eas) β€” Fully characterized
Operating Temperature Range β€” -55C to +175C
Lead-Free / RoHS β€” Yes (PBF suffix = lead-free)

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