IRLR3410TRLPBF vs IRLR3410TRRPBF Comparison
Detailed side-by-side comparison of IRLR3410TRLPBF by Infineon and IRLR3410TRRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLR3410TRLPBF | IRLR3410TRRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.65 | $0.58 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | β |
| Part Number | IRLR3410TRLPBF | β |
| Technology | HEXFET (5th generation) N-Channel MOSFET | IR HEXFET (IR MOSFET process) |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at TC=25C | 17 A | β |
| Pulsed Drain Current (IDM) | 60 A | β |
| On-Resistance RDS(on) max @ VGS=10V | 105 mOhm | β |
| On-Resistance RDS(on) max @ VGS=5V | [DATA_NEEDED: RDS(on) @ VGS=5V] | β |
| Gate-Source Threshold VGS(th) typ | 2.0 V | β |
| Total Gate Charge (Qg) | 22.7 nC | 22.7 nC |
| Gate Drive Level | Logic level (5V capable) | β |
| Power Dissipation (PD) at TC=25C | 79 W | β |
| Operating Junction Temperature | -55C to +175C | β |
| Package | TO-252AA (DPAK), surface mount | TO-252AA (DPAK), surface mount |
| Mounting Type | Surface Mount (tape and reel) | Surface Mount |
| RoHS Compliance | Compliant (Pb-free) | β |
| MSL Level | 1 | 1 (per JEDEC J-STD-020) |
| Avalanche Rated | Yes (UIS tested) | Yes |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID, Tc=25C) | β | 17 A |
| Power Dissipation (PD, Tc=25C) | β | 79 W |
| On-Resistance (RDS(on) max at VGS=10V) | β | 105 mOhm |
| Gate-Source Threshold Voltage (VGS(th) typ) | β | 1 V (at 250 uA) |
| Packaging Style | β | Tape & Reel Right (TRR) |
| Operating Temperature Range | β | -55C to +175C (junction) |
| Lead-Free / RoHS Status | β | Lead-free, RoHS compliant (PBF suffix) |