IRLR3410TRPBF vs IRLR3410TRRPBF Comparison

Detailed side-by-side comparison of IRLR3410TRPBF by Infineon and IRLR3410TRRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRLR3410TRRPBF IRLR3410TRRPBF - 100V 17A N-Channel HEXFET MOSFET | Infineon

IRLR3410TRRPBF - 100V 17A N-Channel HEXFET MOSFET | Infineon

IRLR3410TRRPBF βœ“ Active

Specification Comparison

Parameter IRLR3410TRPBF IRLR3410TRRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.81 $0.58
FET Type N-Channel N-Channel
Technology HEXFET (IR MOSFET, 5th generation) IR HEXFET (IR MOSFET process)
Drain-Source Voltage (Vdss) 100 V β€”
Continuous Drain Current (Id) at Tc=25C 17 A β€”
Power Dissipation (Pd) at Tc=25C 79 W β€”
On-Resistance RDS(on) max 105 mOhm β€”
Gate Threshold Voltage Vgs(th) Logic-level (drive ~4.5V) β€”
Total Gate Charge (Qg) 22.7 nC 22.7 nC
Package TO-252AA (DPAK), surface mount TO-252AA (DPAK), surface mount
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +175C (junction) -55C to +175C (junction)
Lead-Free / RoHS Yes (PBF suffix) β€”
MSL Level 1 (unlimited floor life at <30C/85% RH) 1 (per JEDEC J-STD-020)
Drain Tab Connection Tab electrically tied to Drain β€”
Polarity N-Channel enhancement mode β€”
Drain-Source Voltage (VDS) β€” 100 V
Continuous Drain Current (ID, Tc=25C) β€” 17 A
Power Dissipation (PD, Tc=25C) β€” 79 W
On-Resistance (RDS(on) max at VGS=10V) β€” 105 mOhm
Gate-Source Threshold Voltage (VGS(th) typ) β€” 1 V (at 250 uA)
Packaging Style β€” Tape & Reel Right (TRR)
Avalanche Rated β€” Yes
Lead-Free / RoHS Status β€” Lead-free, RoHS compliant (PBF suffix)

Datasheets & Resources

Browse All Products Create BOM Request Quote