IRLR9343TRPBF vs IRFR5505TRPBF Comparison

Detailed side-by-side comparison of IRLR9343TRPBF by Infineon and IRFR5505TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRLR9343TRPBF IRLR9343TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRLR9343TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRLR9343TRPBF βœ“ Active
Infineon
IRFR5505TRPBF IRFR5505TRPBF - P-Channel 55V 18A HEXFET MOSFET | Infineon

IRFR5505TRPBF - P-Channel 55V 18A HEXFET MOSFET | Infineon

IRFR5505TRPBF βœ“ Active

Specification Comparison

Parameter IRLR9343TRPBF IRFR5505TRPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.47 $0.48
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Part Number IRLR9343TRPBF β€”
FET Type P-Channel MOSFET β€”
Technology IR HEXFET IR MOSFET (HEXFET 5th generation)
Drain-Source Voltage (VDS) -55 V β€”
Continuous Drain Current (ID) at Tc=25C -20 A β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current rating] -72 A
On-Resistance RDS(on) max at VGS=-10V 105 mOhm 110 mOhm
Gate-Source Voltage (VGS) max [DATA_NEEDED: max VGS rating] +/-20 V
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] β€”
Total Gate Charge (Qg) 31 nC (typical) 21.3 nC
Power Dissipation (PD) at Tc=25C 79 W β€”
Package PG-TO252-3 (DPAK) Surface Mount TO-252AA (DPAK), surface mount
Mounting Type Surface Mount Surface Mount
Operating Temperature Range [DATA_NEEDED: Tj min/max operating range] β€”
RoHS Status Compliant Compliant (PBF suffix)
Lead-Free Yes Yes (PBF suffix)
MSL Level 1 β€”
Optimized Application Class-D audio amplifier output stages β€”
Polarity P-Channel P-Channel
Series β€” HEXFET
Drain-Source Voltage (VDS) max β€” -55 V
Continuous Drain Current (ID) at TC=25C β€” -18 A
Gate-Source Charge (Qgs) β€” [DATA_NEEDED: Qgs]
Gate-Drain Charge (Qgd) β€” [DATA_NEEDED: Qgd]
Input Capacitance (Ciss) β€” [DATA_NEEDED: Ciss]
Output Capacitance (Coss) β€” [DATA_NEEDED: Coss]
Rise Time (tr) β€” [DATA_NEEDED: tr]
Fall Time (tf) β€” [DATA_NEEDED: tf]
Maximum Power Dissipation (PD) at TC=25C β€” 57 W
Operating Junction Temperature β€” -55 C to +175 C
Thermal Resistance Junction-to-Case (RthJC) β€” 2.2 C/W
Thermal Resistance Junction-to-Ambient (RthJA) β€” 50 C/W (typical, DPAK on 1 oz copper)

Datasheets & Resources

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