IRLU024NPBF vs IRF4905PBF Comparison
Detailed side-by-side comparison of IRLU024NPBF by Infineon and IRF4905PBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRLU024NPBF
IRLU024NPBF - 55V 17A N-Channel HEXFET MOSFET | Infineon
IRLU024NPBF β Active
Specification Comparison
| Parameter | IRLU024NPBF | IRF4905PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.61 | $0.95 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | β |
| Part Number | IRLU024NPBF | β |
| FET Type | N-Channel, Logic-Level | P-Channel |
| Technology | HEXFET Power MOSFET (5th generation) | HEXFET (IR MOSFET) |
| Drain-to-Source Voltage (VDS) | 55 V | β |
| Continuous Drain Current (ID) at TC=25C | 17 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | 65 mOhm | β |
| On-Resistance RDS(on) max at VGS=5V | [DATA_NEEDED: RDS(on) at VGS=5V] | β |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) min/typ/max] | β |
| Total Gate Charge (Qg) | 10 nC (typical, per listing) | 120 nC |
| Power Dissipation (PD) at TC=25C | 45 W | β |
| Thermal Resistance Junction-to-Case (RthJC) | 3.3 C/W | β |
| Thermal Resistance Junction-to-Ambient (RthJA) | 110 C/W (50 C/W PCB-mounted) | β |
| Operating Junction Temperature | -55C to +175C | β |
| Package | IPAK (TO-251AA), Through Hole | TO-220AB (through-hole) |
| Mounting Type | Through Hole | Through Hole |
| Lead-Free / RoHS | Yes (PBF suffix indicates lead-free plating) | Yes (PBF suffix = lead-free, RoHS compliant) |
| Qualification | JEDEC standard | β |
| Gate Drive Voltage (optimized) | 10 V (capable of 4.5 V) | β |
| Drain-Source Voltage (VDS) | β | -55 V |
| Continuous Drain Current (ID) at TC | β | -74 A |
| Power Dissipation (PD) at TC | β | 200 W |
| On-Resistance RDS(on) max at VGS=-10V | β | 20 mΞ© |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typ/range] |
| Operating Temperature Range | β | -55 Β°C to +175 Β°C (junction) |
| Pin Configuration | β | Gate - Drain - Source (left to right) |
| MSL Level | β | 1 (not moisture-sensitive for TO-220) |