IRLU024NPBF vs IRFR5505TRPBF Comparison
Detailed side-by-side comparison of IRLU024NPBF by Infineon and IRFR5505TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLU024NPBF | IRFR5505TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.61 | $0.48 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon Technologies (formerly International Rectifier) |
| Part Number | IRLU024NPBF | β |
| FET Type | N-Channel, Logic-Level | β |
| Technology | HEXFET Power MOSFET (5th generation) | IR MOSFET (HEXFET 5th generation) |
| Drain-to-Source Voltage (VDS) | 55 V | β |
| Continuous Drain Current (ID) at TC=25C | 17 A | -18 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | -72 A |
| On-Resistance RDS(on) max at VGS=10V | 65 mOhm | β |
| On-Resistance RDS(on) max at VGS=5V | [DATA_NEEDED: RDS(on) at VGS=5V] | β |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) min/typ/max] | β |
| Total Gate Charge (Qg) | 10 nC (typical, per listing) | 21.3 nC |
| Power Dissipation (PD) at TC=25C | 45 W | β |
| Thermal Resistance Junction-to-Case (RthJC) | 3.3 C/W | 2.2 C/W |
| Thermal Resistance Junction-to-Ambient (RthJA) | 110 C/W (50 C/W PCB-mounted) | 50 C/W (typical, DPAK on 1 oz copper) |
| Operating Junction Temperature | -55C to +175C | -55 C to +175 C |
| Package | IPAK (TO-251AA), Through Hole | TO-252AA (DPAK), surface mount |
| Mounting Type | Through Hole | Surface Mount |
| Lead-Free / RoHS | Yes (PBF suffix indicates lead-free plating) | β |
| Qualification | JEDEC standard | β |
| Gate Drive Voltage (optimized) | 10 V (capable of 4.5 V) | β |
| Series | β | HEXFET |
| Polarity | β | P-Channel |
| Drain-Source Voltage (VDS) max | β | -55 V |
| Gate-Source Voltage (VGS) max | β | +/-20 V |
| On-Resistance RDS(on) max at VGS=-10V | β | 110 mOhm |
| Gate-Source Charge (Qgs) | β | [DATA_NEEDED: Qgs] |
| Gate-Drain Charge (Qgd) | β | [DATA_NEEDED: Qgd] |
| Input Capacitance (Ciss) | β | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | β | [DATA_NEEDED: Coss] |
| Rise Time (tr) | β | [DATA_NEEDED: tr] |
| Fall Time (tf) | β | [DATA_NEEDED: tf] |
| Maximum Power Dissipation (PD) at TC=25C | β | 57 W |
| RoHS Status | β | Compliant (PBF suffix) |
| Lead-Free | β | Yes (PBF suffix) |