IRLZ34NPBF vs IRFZ44NSTRLPBF Comparison
Detailed side-by-side comparison of IRLZ34NPBF by Infineon and IRFZ44NSTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IRFZ44NSTRLPBF - 55V 49A N-Channel HEXFET MOSFET D2PAK | Infineon
IRFZ44NSTRLPBF β ActiveSpecification Comparison
| Parameter | IRLZ34NPBF | IRFZ44NSTRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.65 | $0.93 |
| Manufacturer | Infineon (formerly International Rectifier) | β |
| Part Number Suffix | PBF = Lead-free (Pb-free), Tube packaging | β |
| Transistor Type | N-Channel HEXFET Power MOSFET | β |
| Drain-to-Source Voltage (VDS) | 55 V | β |
| Continuous Drain Current (ID) at Tc=25 C | 30 A | β |
| Continuous Drain Current (ID) at Tc=100 C | [DATA_NEEDED: ID at Tc=100 C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance Rds(on) max @ VGS=10 V | 35 mOhm | β |
| On-Resistance Rds(on) max @ VGS=5 V | [DATA_NEEDED: Rds(on) at VGS=5 V] | β |
| Gate Threshold Voltage VGS(th) | 1.0 V to 2.0 V (logic-level) | β |
| Total Gate Charge (Qg) | 16.7 nC (typical) | 42 nC |
| Power Dissipation (PD) at Tc=25 C | 68 W | β |
| Operating Junction Temperature | -55 C to +175 C | β |
| Package | TO-220AB (through-hole, 3 leads + tab) | D2PAK (TO-263) |
| Mounting Type | Through Hole | Surface Mount |
| RoHS Status | Compliant (Pb-free PBF suffix) | Compliant |
| MSL Level | Not applicable (through-hole) | β |
| Polarity | β | N-Channel |
| MOSFET Operating Mode | β | Enhancement |
| Drain-Source Voltage (VDS) | β | 55 V |
| Continuous Drain Current (ID) at TC | β | 49 A |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: gate threshold voltage] |
| Drain-Source On-Resistance RDS(on) max | β | 17.5 mOhm at VGS=10V |
| Power Dissipation (TC) | β | 94 W |
| Power Dissipation (TA) | β | 3.8 W |
| Operating Temperature Range | β | -55C to +175C |
| Technology | β | HEXFET |
| Lead-Free (PBF suffix) | β | Yes |