IRLZ34NPBF vs IRLZ34NSTRLPBF Comparison
Detailed side-by-side comparison of IRLZ34NPBF by Infineon and IRLZ34NSTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLZ34NPBF | IRLZ34NSTRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.65 | $0.58 |
| Manufacturer | Infineon (formerly International Rectifier) | β |
| Part Number Suffix | PBF = Lead-free (Pb-free), Tube packaging | β |
| Transistor Type | N-Channel HEXFET Power MOSFET | β |
| Drain-to-Source Voltage (VDS) | 55 V | 55 V |
| Continuous Drain Current (ID) at Tc=25 C | 30 A | β |
| Continuous Drain Current (ID) at Tc=100 C | [DATA_NEEDED: ID at Tc=100 C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 110 A |
| On-Resistance Rds(on) max @ VGS=10 V | 35 mOhm | β |
| On-Resistance Rds(on) max @ VGS=5 V | [DATA_NEEDED: Rds(on) at VGS=5 V] | β |
| Gate Threshold Voltage VGS(th) | 1.0 V to 2.0 V (logic-level) | β |
| Total Gate Charge (Qg) | 16.7 nC (typical) | 16.7 nC |
| Power Dissipation (PD) at Tc=25 C | 68 W | β |
| Operating Junction Temperature | -55 C to +175 C | β |
| Package | TO-220AB (through-hole, 3 leads + tab) | D2PAK (TO-263), surface mount |
| Mounting Type | Through Hole | Surface Mount |
| RoHS Status | Compliant (Pb-free PBF suffix) | Compliant (Pb-free) |
| MSL Level | Not applicable (through-hole) | β |
| FET Type | β | N-Channel |
| Continuous Drain Current (ID) at TC | β | 30 A |
| RDS(on) at VGS=5V | β | 35 mOhm (typical) |
| Gate Threshold Voltage (VGS(th)) | β | Logic-level (5 V drive compatible) |
| Power Dissipation (Ta) | β | 3.8 W |
| Power Dissipation (Tc) | β | 68 W |
| Operating Temperature Range | β | [DATA_NEEDED: operating temperature range] |
| Built-in Body Diode | β | Yes |
| Configuration | β | Single with built-in diode |
| Switching Frequency Optimization | β | Below 100 kHz |
| Cell Structure | β | HEXFET planar (5th generation) |
| Qualification | β | JEDEC standard |