IRLZ34NSTRLPBF vs IRFR1205TRPBF Comparison
Detailed side-by-side comparison of IRLZ34NSTRLPBF by Infineon and IRFR1205TRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLZ34NSTRLPBF | IRFR1205TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.58 | $0.49 |
| FET Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (VDS) | 55 V | β |
| Continuous Drain Current (ID) at TC | 30 A | β |
| Pulsed Drain Current (IDM) | 110 A | 160 A |
| RDS(on) at VGS=5V | 35 mOhm (typical) | β |
| Gate Threshold Voltage (VGS(th)) | Logic-level (5 V drive compatible) | 2 V min, 4 V max |
| Total Gate Charge (Qg) | 16.7 nC | 43.3 nC |
| Power Dissipation (Ta) | 3.8 W | β |
| Power Dissipation (Tc) | 68 W | β |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | β |
| Package | D2PAK (TO-263), surface mount | TO-252AA (DPAK) |
| Built-in Body Diode | Yes | β |
| Configuration | Single with built-in diode | β |
| Mounting Type | Surface Mount | Surface Mount |
| Switching Frequency Optimization | Below 100 kHz | β |
| Cell Structure | HEXFET planar (5th generation) | β |
| Qualification | JEDEC standard | β |
| RoHS Status | Compliant (Pb-free) | Compliant (PBF suffix = lead-free) |
| Technology | β | HEXFET (IR MOSFET, 5th generation) |
| Drain-Source Voltage (VDS) | β | 55 V |
| Continuous Drain Current (ID) at TC=25C | β | 44 A |
| Gate-Source Voltage (VGS) max | β | +/- 20 V |
| On-Resistance RDS(on) at VGS=10V | β | 27 mOhm max |
| Power Dissition (PD) at TC=25C | β | 107 W |
| Operating Junction Temperature | β | -55C to +175C |
| Lead-Free / Halogen-Free | β | Yes / [DATA_NEEDED: halogen status] |