IRLZ34NSTRLPBF vs IRFR5305TRLPBF Comparison

Detailed side-by-side comparison of IRLZ34NSTRLPBF by Infineon and IRFR5305TRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRLZ34NSTRLPBF IRFR5305TRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.58 $0.38
FET Type N-Channel β€”
Drain-to-Source Voltage (VDS) 55 V β€”
Continuous Drain Current (ID) at TC 30 A β€”
Pulsed Drain Current (IDM) 110 A [DATA_NEEDED: pulsed drain current]
RDS(on) at VGS=5V 35 mOhm (typical) β€”
Gate Threshold Voltage (VGS(th)) Logic-level (5 V drive compatible) [DATA_NEEDED: VGS(th) range]
Total Gate Charge (Qg) 16.7 nC β€”
Power Dissipation (Ta) 3.8 W β€”
Power Dissipation (Tc) 68 W β€”
Operating Temperature Range [DATA_NEEDED: operating temperature range] β€”
Package D2PAK (TO-263), surface mount TO-252AA (DPAK), surface mount
Built-in Body Diode Yes β€”
Configuration Single with built-in diode β€”
Mounting Type Surface Mount Surface Mount
Switching Frequency Optimization Below 100 kHz β€”
Cell Structure HEXFET planar (5th generation) β€”
Qualification JEDEC standard β€”
RoHS Status Compliant (Pb-free) β€”
Polarity / Channel Type β€” P-Channel
Drain-Source Voltage (VDS) β€” -55 V
Continuous Drain Current (ID) at Tc=25C β€” -31 A
Gate-Source Voltage (VGS) max β€” Β±20 V
RDS(on) max at VGS=-10V β€” 65 mΞ©
RDS(on) max at VGS=-5V β€” [DATA_NEEDED: RDS(on) at VGS=-5V]
Power Dissipation (PD) at Tc=25C β€” 110 W
Operating Junction Temperature β€” -55C to +175C
Technology β€” HEXFET fifth-generation planar MOSFET
Avalanche Rated β€” Yes (fully avalanche rated)
Lead-Free / RoHS β€” Yes (Pb-free, suffix "PBF")
Tape & Reel Orientation β€” Left orientation (TRLPBF = Tape & Reel, Left)

Datasheets & Resources

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