IRLZ34NSTRLPBF vs IRFS4010TRLPBF Comparison
Detailed side-by-side comparison of IRLZ34NSTRLPBF by Infineon and IRFS4010TRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLZ34NSTRLPBF | IRFS4010TRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.58 | $0.86 |
| FET Type | N-Channel | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 55 V | 100 V |
| Continuous Drain Current (ID) at TC | 30 A | β |
| Pulsed Drain Current (IDM) | 110 A | [DATA_NEEDED: pulsed drain current] |
| RDS(on) at VGS=5V | 35 mOhm (typical) | β |
| Gate Threshold Voltage (VGS(th)) | Logic-level (5 V drive compatible) | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge (Qg) | 16.7 nC | 143 nC |
| Power Dissipation (Ta) | 3.8 W | β |
| Power Dissipation (Tc) | 68 W | β |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | β |
| Package | D2PAK (TO-263), surface mount | D2PAK (TO-263AB), surface mount |
| Built-in Body Diode | Yes | β |
| Configuration | Single with built-in diode | β |
| Mounting Type | Surface Mount | Surface Mount |
| Switching Frequency Optimization | Below 100 kHz | β |
| Cell Structure | HEXFET planar (5th generation) | β |
| Qualification | JEDEC standard | JEDEC standard |
| RoHS Status | Compliant (Pb-free) | Compliant |
| Technology | β | IR MOSFET (HEXFET) |
| Continuous Drain Current (ID) at TC=25C | β | 180 A |
| RDS(on) max @ VGS=10V | β | 4.7 mOhm |
| Gate-to-Source Voltage (VGS) max | β | Plus or minus 20 V |
| Power Dissipation (PD) at TC=25C | β | 375 W |
| Operating Junction Temperature | β | -55C to +175C |
| Gate Drive Voltage | β | 10 V (normal level, optimized) |
| MSL Level | β | 1 |