IRLZ34NSTRLPBF vs IRLZ34NPBF Comparison
Detailed side-by-side comparison of IRLZ34NSTRLPBF by Infineon and IRLZ34NPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRLZ34NSTRLPBF | IRLZ34NPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.58 | $0.65 |
| FET Type | N-Channel | β |
| Drain-to-Source Voltage (VDS) | 55 V | 55 V |
| Continuous Drain Current (ID) at TC | 30 A | β |
| Pulsed Drain Current (IDM) | 110 A | [DATA_NEEDED: pulsed drain current] |
| RDS(on) at VGS=5V | 35 mOhm (typical) | β |
| Gate Threshold Voltage (VGS(th)) | Logic-level (5 V drive compatible) | β |
| Total Gate Charge (Qg) | 16.7 nC | 16.7 nC (typical) |
| Power Dissipation (Ta) | 3.8 W | β |
| Power Dissipation (Tc) | 68 W | β |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | β |
| Package | D2PAK (TO-263), surface mount | TO-220AB (through-hole, 3 leads + tab) |
| Built-in Body Diode | Yes | β |
| Configuration | Single with built-in diode | β |
| Mounting Type | Surface Mount | Through Hole |
| Switching Frequency Optimization | Below 100 kHz | β |
| Cell Structure | HEXFET planar (5th generation) | β |
| Qualification | JEDEC standard | β |
| RoHS Status | Compliant (Pb-free) | Compliant (Pb-free PBF suffix) |
| Manufacturer | β | Infineon (formerly International Rectifier) |
| Part Number Suffix | β | PBF = Lead-free (Pb-free), Tube packaging |
| Transistor Type | β | N-Channel HEXFET Power MOSFET |
| Continuous Drain Current (ID) at Tc=25 C | β | 30 A |
| Continuous Drain Current (ID) at Tc=100 C | β | [DATA_NEEDED: ID at Tc=100 C] |
| On-Resistance Rds(on) max @ VGS=10 V | β | 35 mOhm |
| On-Resistance Rds(on) max @ VGS=5 V | β | [DATA_NEEDED: Rds(on) at VGS=5 V] |
| Gate Threshold Voltage VGS(th) | β | 1.0 V to 2.0 V (logic-level) |
| Power Dissipation (PD) at Tc=25 C | β | 68 W |
| Operating Junction Temperature | β | -55 C to +175 C |
| MSL Level | β | Not applicable (through-hole) |