IRS2008STRPBF vs IRS2153DSPBF Comparison

Detailed side-by-side comparison of IRS2008STRPBF by Infineon and IRS2153DSPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRS2008STRPBF IRS2008STRPBF - 200V Half-Bridge Gate Driver IC | Infineon

IRS2008STRPBF - 200V Half-Bridge Gate Driver IC | Infineon

IRS2008STRPBF βœ“ Active

Specification Comparison

Parameter IRS2008STRPBF IRS2153DSPBF
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.33 $0.98
Manufacturer Infineon Technologies β€”
Part Number IRS2008STRPBF β€”
Function Half-Bridge Gate Driver Half-bridge gate driver with RC input oscillator
Driven Configuration Half-Bridge (High-Side + Low-Side, synchronous) β€”
Channel Type Synchronous (independent inputs) β€”
Number of Outputs 2 (high-side + low-side) 2 (HO, LO)
Output Type Non-Inverting β€”
Logic Input Compatibility TTL/CMOS β€”
Input Voltage (VCC) 10 V to 20 V (per datasheet family) β€”
Maximum Offset Voltage (Voffset) 200 V 600 V
Source Current (typ.) 0.29 A β€”
Sink Current (typ.) 0.6 A β€”
Rise Time (typ.) [DATA_NEEDED: rise time ns] β€”
Fall Time (typ.) [DATA_NEEDED: fall time ns] β€”
Propagation Delay (typ.) [DATA_NEEDED: propagation delay ns] β€”
VCC UVLO Threshold Yes (per datasheet family) β€”
VBS UVLO Threshold Yes (per datasheet family) β€”
Shutdown Pin (SD) Yes (active logic-level shutdown) β€”
Operating Temperature -40 C to +125 C (industrial) -40 C to +125 C
Package 8-SOIC (SOIC N), 3.90 mm body width 8-SOIC (SOIC-8)
Mounting Type Surface Mount (Tape & Reel) Surface Mount
Lead Finish Matte Tin (lead-free) β€”
RoHS Status Compliant β€”
MSL Level [DATA_NEEDED: MSL rating] β€”
Configuration β€” High-side + low-side driver, half-bridge
VCC Supply Voltage β€” 10 V to 20 V
VBS High-side Supply Voltage β€” VCC + 0.3 V (typical bootstrap)
Gate Drive Source Current (IO+) β€” 130 mA typical
Gate Drive Sink Current (IO-) β€” 270 mA typical
Rise Time (tr) β€” [DATA_NEEDED: tr] (typical ~100 ns)
Fall Time (tf) β€” [DATA_NEEDED: tf] (typical ~50 ns)
Internal Deadtime β€” ~1.2 us
Input Type β€” RC-input oscillator (no external PWM required)
Logic Polarity β€” Inverting / Non-inverting per channel
Undervoltage Lockout β€” Yes (VCC)
Technology β€” HVIC + latch-immune CMOS

Datasheets & Resources

Browse All Products Create BOM Request Quote