IRS2153DSTRPBF vs IRS2153DSPBF Comparison

Detailed side-by-side comparison of IRS2153DSTRPBF by Infineon and IRS2153DSPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IRS2153DSTRPBF IRS2153DSPBF
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.42 $0.98
Topology Half-Bridge Gate Driver with internal oscillator β€”
High-Side Floating Supply Absolute Max 600 V β€”
VDD Supply Voltage Range 10 V to 20 V β€”
Output Source Current (typ.) 0.18 A β€”
Output Sink Current (typ.) 0.26 A β€”
Internal Propagation Delay (typ.) 1.1 us β€”
Integrated Bootstrap FET Yes β€”
Oscillator Type RC-based, similar to CMOS 555 timer β€”
Programmable Shutdown Pin Yes β€”
Package 8-pin SOIC 8-SOIC (SOIC-8)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -40C to +125C β€”
Technology HVIC + latch-immune CMOS HVIC + latch-immune CMOS
RoHS Status Compliant β€”
Lead-Free Yes β€”
Function β€” Half-bridge gate driver with RC input oscillator
Configuration β€” High-side + low-side driver, half-bridge
Number of Outputs β€” 2 (HO, LO)
Maximum Offset Voltage (Voffset) β€” 600 V
VCC Supply Voltage β€” 10 V to 20 V
VBS High-side Supply Voltage β€” VCC + 0.3 V (typical bootstrap)
Gate Drive Source Current (IO+) β€” 130 mA typical
Gate Drive Sink Current (IO-) β€” 270 mA typical
Rise Time (tr) β€” [DATA_NEEDED: tr] (typical ~100 ns)
Fall Time (tf) β€” [DATA_NEEDED: tf] (typical ~50 ns)
Internal Deadtime β€” ~1.2 us
Operating Temperature β€” -40 C to +125 C
Input Type β€” RC-input oscillator (no external PWM required)
Logic Polarity β€” Inverting / Non-inverting per channel
Undervoltage Lockout β€” Yes (VCC)

Datasheets & Resources

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