ISC009N03LF2SATMA1 vs ISC028N03LF2SATMA1 Comparison
Detailed side-by-side comparison of ISC009N03LF2SATMA1 by Infineon and ISC028N03LF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC009N03LF2SATMA1
ISC009N03LF2SATMA1 - 30V 341A 0.9mΞ© N-Channel MOSFET | Infineon
ISC009N03LF2SATMA1 β ActiveInfineon
ISC028N03LF2SATMA1
ISC028N03LF2SATMA1 - 30V 2.8mOhm N-Ch MOSFET | Infineon OptiMOS
ISC028N03LF2SATMA1 β ActiveSpecification Comparison
| Parameter | ISC009N03LF2SATMA1 | ISC028N03LF2SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.48 | $0.86 |
| Transistor Type | N-Channel MOSFET | β |
| Technology | OptiMOSβ’ trench | β |
| Drain-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID) at Ta | 43 A | β |
| Continuous Drain Current (ID) at Tc | 341 A | β |
| Power Dissipation (PD) at Ta | 3 W | β |
| Power Dissipation (PD) at Tc | 188 W | β |
| On-Resistance RDS(on) max | 0.9 mΞ© | β |
| Gate Threshold Voltage (VGS(th)) | 2.35 V (typ) | β |
| Package | PG-TDSON-8-62 (SuperSO8 5x6) | PG-TDSON-8-62 (5x6 mm) with exposed pad |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 Β°C to +175 Β°C (junction, [DATA_NEEDED: exact operating range from datasheet]) | β |
| Gate Drive Voltage (VGS) | 10 V (typical for rated RDS(on)) | β |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 5 30V |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) max | β | 30 V |
| Continuous Drain Current (ID) at TA=25C | β | 24 A |
| Continuous Drain Current (ID) at TC=25C | β | 128 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | β | 2.8 mOhm |
| Gate Threshold Voltage VGS(th) typ | β | 2.35 V |
| Power Dissipation at TA | β | 3 W |
| Power Dissipation at TC | β | 83 W |
| Operating Junction Temperature | β | -55 C to +175 C |
| RoHS / Lead-Free | β | Yes (RoHS compliant) |