ISC011N03L5SATMA1 vs BSC034N06NSATMA1 Comparison
Detailed side-by-side comparison of ISC011N03L5SATMA1 by Infineon and BSC034N06NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | ISC011N03L5SATMA1 | BSC034N06NSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.47 | $0.65 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 5 / StrongIRFET 30 V | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 30 V | 60 V |
| Continuous Drain Current (ID) @ Ta=25C | 37 A | β |
| Continuous Drain Current (ID) @ Tc=25C | 100 A | β |
| Power Dissipation (PD) @ Ta=25C | 2.5 W | β |
| Power Dissipation (PD) @ Tc=25C | 96 W | β |
| Package | PG-TDSON-8-1 (TDSON EP, 8-pin, exposed pad) | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55 C to +175 C (TJ) | β |
| Technology | OptiMOS 5 trench MOSFET | OptiMOS 5 |
| Gate Drive | Logic-level compatible | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| Polarity | β | N-Channel |
| Gate-Source Voltage (VGS) | β | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at TC=25C | β | 100 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max at VGS=10V | β | 3.4 mOhm |
| On-Resistance RDS(on) max at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th)] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg] |
| Power Dissipation at Ta=25C | β | 2.5 W |
| Power Dissipation at Tc=25C | β | 74 W |
| Operating Temperature Range | β | -55C to +150C |