ISC011N03L5SATMA1 vs BSZ018NE2LSATMA1 Comparison

Detailed side-by-side comparison of ISC011N03L5SATMA1 by Infineon and BSZ018NE2LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC011N03L5SATMA1

ISC011N03L5SATMA1 - 30V 100A OptiMOS 5 N-MOSFET | Infineon

ISC011N03L5SATMA1 βœ“ Active
Infineon
BSZ018NE2LSATMA1 BSZ018NE2LSATMA1 - 25V OptiMOS N-Ch MOSFET, 23A/40A | Infineon

BSZ018NE2LSATMA1 - 25V OptiMOS N-Ch MOSFET, 23A/40A | Infineon

BSZ018NE2LSATMA1 βœ“ Active

Specification Comparison

Parameter ISC011N03L5SATMA1 BSZ018NE2LSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.47 $0.31
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 / StrongIRFET 30 V β€”
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 30 V 25 V
Continuous Drain Current (ID) @ Ta=25C 37 A β€”
Continuous Drain Current (ID) @ Tc=25C 100 A β€”
Power Dissipation (PD) @ Ta=25C 2.5 W β€”
Power Dissipation (PD) @ Tc=25C 96 W β€”
Package PG-TDSON-8-1 (TDSON EP, 8-pin, exposed pad) PG-TSDSON-8-FL (8-pin TSDSON with exposed pad)
Mounting Type Surface Mount Surface Mount
Operating Temperature -55 C to +175 C (TJ) β€”
Technology OptiMOS 5 trench MOSFET N-Channel Trench MOSFET
Gate Drive Logic-level compatible β€”
RoHS Status Compliant Compliant
MSL Level 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Product Family β€” OptiMOS 25V
Continuous Drain Current (TA) β€” 23 A
Continuous Drain Current (TC) β€” 40 A
Power Dissipation (TA) β€” 2.1 W
Power Dissipation (TC) β€” 69 W
On-Resistance RDS(on) β€” [DATA_NEEDED: RDS(on) typical at VGS=10V]
Gate Threshold Voltage VGS(th) β€” [DATA_NEEDED: typical VGS(th)]
Gate Charge Qg β€” [DATA_NEEDED: total gate charge at VGS=10V]
Operating Temperature Range β€” -55C to +150C
Lead-Free β€” Yes
Halogen-Free β€” Yes

Datasheets & Resources

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