ISC011N03L5SATMA1 vs BSZ018NE2LSATMA1 Comparison
Detailed side-by-side comparison of ISC011N03L5SATMA1 by Infineon and BSZ018NE2LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC011N03L5SATMA1
ISC011N03L5SATMA1 - 30V 100A OptiMOS 5 N-MOSFET | Infineon
ISC011N03L5SATMA1 β ActiveSpecification Comparison
| Parameter | ISC011N03L5SATMA1 | BSZ018NE2LSATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.47 | $0.31 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 / StrongIRFET 30 V | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 30 V | 25 V |
| Continuous Drain Current (ID) @ Ta=25C | 37 A | β |
| Continuous Drain Current (ID) @ Tc=25C | 100 A | β |
| Power Dissipation (PD) @ Ta=25C | 2.5 W | β |
| Power Dissipation (PD) @ Tc=25C | 96 W | β |
| Package | PG-TDSON-8-1 (TDSON EP, 8-pin, exposed pad) | PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -55 C to +175 C (TJ) | β |
| Technology | OptiMOS 5 trench MOSFET | N-Channel Trench MOSFET |
| Gate Drive | Logic-level compatible | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Product Family | β | OptiMOS 25V |
| Continuous Drain Current (TA) | β | 23 A |
| Continuous Drain Current (TC) | β | 40 A |
| Power Dissipation (TA) | β | 2.1 W |
| Power Dissipation (TC) | β | 69 W |
| On-Resistance RDS(on) | β | [DATA_NEEDED: RDS(on) typical at VGS=10V] |
| Gate Threshold Voltage VGS(th) | β | [DATA_NEEDED: typical VGS(th)] |
| Gate Charge Qg | β | [DATA_NEEDED: total gate charge at VGS=10V] |
| Operating Temperature Range | β | -55C to +150C |
| Lead-Free | β | Yes |
| Halogen-Free | β | Yes |