ISC011N03L5SATMA1 vs IAUT300N10S5N015ATMA1 Comparison

Detailed side-by-side comparison of ISC011N03L5SATMA1 by Infineon and IAUT300N10S5N015ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC011N03L5SATMA1

ISC011N03L5SATMA1 - 30V 100A OptiMOS 5 N-MOSFET | Infineon

ISC011N03L5SATMA1 βœ“ Active
Infineon
IAUT300N10S5N015ATMA1

IAUT300N10S5N015ATMA1 - 100V 300A OptiMOS 5 N-MOSFET | Infineon

IAUT300N10S5N015ATMA1 βœ“ Active

Specification Comparison

Parameter ISC011N03L5SATMA1 IAUT300N10S5N015ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.47 $4.10
Manufacturer Infineon Technologies β€”
Series OptiMOS 5 / StrongIRFET 30 V β€”
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 30 V 100 V
Continuous Drain Current (ID) @ Ta=25C 37 A β€”
Continuous Drain Current (ID) @ Tc=25C 100 A β€”
Power Dissipation (PD) @ Ta=25C 2.5 W β€”
Power Dissipation (PD) @ Tc=25C 96 W β€”
Package PG-TDSON-8-1 (TDSON EP, 8-pin, exposed pad) PG-HSOF-8-1 (HSOF-8)
Mounting Type Surface Mount Surface Mount
Operating Temperature -55 C to +175 C (TJ) β€”
Technology OptiMOS 5 trench MOSFET OptiMOS 5 N-Channel Power MOSFET
Gate Drive Logic-level compatible β€”
RoHS Status Compliant β€”
MSL Level 1 (per JEDEC J-STD-020) MSL1 (260Β°C peak reflow)
Continuous Drain Current (ID, Tc) β€” 300 A
Power Dissipation (PD, Tc) β€” 375 W
RDS(on) (typ, VGS=10V) β€” 1.5 mΞ©
Gate-Source Voltage (VGS) β€” Β±20 V
Gate Threshold Voltage (VGS(th), typ) β€” [DATA_NEEDED: VGS(th) value]
Operating Temperature Range β€” -55Β°C to +175Β°C
Automotive Qualification β€” AEC-Q101 qualified
RoHS Compliance β€” RoHS compliant (Green product)
Avalanche Tested β€” 100% avalanche tested
Polarity β€” N-Channel
Mode of Operation β€” Enhancement-mode

Datasheets & Resources

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