ISC011N03L5SATMA1 vs IPD135N03LGATMA1 Comparison

Detailed side-by-side comparison of ISC011N03L5SATMA1 by Infineon and IPD135N03LGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC011N03L5SATMA1

ISC011N03L5SATMA1 - 30V 100A OptiMOS 5 N-MOSFET | Infineon

ISC011N03L5SATMA1 ✓ Active
Infineon
IPD135N03LGATMA1 IPD135N03LGATMA1 - 30V 30A N-Ch OptiMOS MOSFET | Infineon

IPD135N03LGATMA1 - 30V 30A N-Ch OptiMOS MOSFET | Infineon

IPD135N03LGATMA1 ✓ Active

Specification Comparison

Parameter ISC011N03L5SATMA1 IPD135N03LGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.47 $0.22
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 / StrongIRFET 30 V OptiMOS™
Transistor Type N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) @ Ta=25C 37 A
Continuous Drain Current (ID) @ Tc=25C 100 A
Power Dissipation (PD) @ Ta=25C 2.5 W
Power Dissipation (PD) @ Tc=25C 96 W
Package PG-TDSON-8-1 (TDSON EP, 8-pin, exposed pad)
Mounting Type Surface Mount Surface Mount
Operating Temperature -55 C to +175 C (TJ)
Technology OptiMOS 5 trench MOSFET
Gate Drive Logic-level compatible
RoHS Status Compliant Compliant
MSL Level 1 (per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Continuous Drain Current (ID) 30 A (Tc)
Power Dissipation (PD) 31 W (Tc)
Package / Case PG-TO252-3 (DPAK), Surface Mount
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage]
On-State Resistance (RDS(on)) [DATA_NEEDED: RDS(on) at 10V VGS]
Gate Charge (Qg) Ultra-low (per OptiMOS™ family spec)
Output Charge (Qoss) Ultra-low (per OptiMOS™ family spec)
Operating Temperature Range -55°C to +175°C (TJ max typical for OptiMOS)
Lead-Free Finish Yes
Qualification Industrial (Infineon OptiMOS™ standard grade)

Datasheets & Resources

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