ISC011N03L5SATMA1 vs IQDH35N03LM5CGATMA1 Comparison

Detailed side-by-side comparison of ISC011N03L5SATMA1 by Infineon and IQDH35N03LM5CGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC011N03L5SATMA1

ISC011N03L5SATMA1 - 30V 100A OptiMOS 5 N-MOSFET | Infineon

ISC011N03L5SATMA1 βœ“ Active
Infineon
IQDH35N03LM5CGATMA1

IQDH35N03LM5CGATMA1 - 30V 700A 0.35mΞ© N-Channel MOSFET | Infineon

IQDH35N03LM5CGATMA1 βœ“ Active

Specification Comparison

Parameter ISC011N03L5SATMA1 IQDH35N03LM5CGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.47 $1.45
Manufacturer Infineon Technologies β€”
Series OptiMOS 5 / StrongIRFET 30 V β€”
Transistor Type N-Channel MOSFET β€”
Drain-Source Voltage (VDS) 30 V β€”
Continuous Drain Current (ID) @ Ta=25C 37 A β€”
Continuous Drain Current (ID) @ Tc=25C 100 A β€”
Power Dissipation (PD) @ Ta=25C 2.5 W β€”
Power Dissipation (PD) @ Tc=25C 96 W β€”
Package PG-TDSON-8-1 (TDSON EP, 8-pin, exposed pad) PG-TTFN-9-U02 (PQFN 5x6 mmΒ²)
Mounting Type Surface Mount Surface Mount
Operating Temperature -55 C to +175 C (TJ) β€”
Technology OptiMOS 5 trench MOSFET OptiMOS 5 trench MOSFET
Gate Drive Logic-level compatible β€”
RoHS Status Compliant Compliant
MSL Level 1 (per JEDEC J-STD-020) 1
Drain-to-Source Voltage (VDS) β€” 30 V
Continuous Drain Current (ID) at Ta β€” 66 A
Pulsed Drain Current (IDM) at Tc β€” 700 A
Gate-to-Source Voltage (VGS) max β€” Β±20 V
Static Drain-to-Source On-Resistance (RDS(on)) β€” 0.35 mΞ© (typical at VGS=10 V)
Power Dissipation (PD) at Ta β€” 2.5 W
Power Dissipation (PD) at Tc β€” 278 W
Operating Temperature Range β€” -55 Β°C to +175 Β°C
Halogen-Free β€” Yes
Channel Type β€” N-Channel

Datasheets & Resources

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