ISC011N04NM7VATMA1 vs BSC005N03LS5IATMA1 Comparison
Detailed side-by-side comparison of ISC011N04NM7VATMA1 by Infineon and BSC005N03LS5IATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC011N04NM7VATMA1
ISC011N04NM7VATMA1 - 40V 1.1mΞ© OptiMOS 7 N-MOSFET | Infineon
ISC011N04NM7VATMA1 β Active
Specification Comparison
| Parameter | ISC011N04NM7VATMA1 | BSC005N03LS5IATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.41 | $1.32 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 Power-Transistor | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID) at TA=25Β°C | 38 A | β |
| Continuous Drain Current (ID) at TC | 256 A | β |
| On-Resistance RDS(on) max @ VGS=10V | 1.1 mΞ© | β |
| Power Dissipation (TA) | 3 W | β |
| Power Dissipation (TC) | 136 W | β |
| Gate Threshold Voltage (Vth) | Up to 3.2 V | β |
| Technology | Trench MOSFET, silicon | OptiMOS 5 (N-channel trench MOSFET) |
| Package | PG-TDSON-8 (source-down) | PG-TDSON-8 FL (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| Short-Circuit Withstand | Yes (current-limited) | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C (TJ) | β |
| RoHS Compliance | Compliant (per Infineon product page) | β |
| MSL Level | MSL 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Part Number | β | BSC005N03LS5IATMA1 |
| Drain-Source Voltage (VDS) max | β | 30 V |
| Continuous Drain Current (ID) at Ta | β | 42 A |
| Continuous Drain Current (ID) at Tc | β | 433 A |
| Pulsed Drain Current (ID,pulse) | β | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) max | β | 0.55 mΞ© at VGS = 10 V, ID = 50 A |
| Gate-Source Threshold Voltage VGS(th) | β | 2 V (typ) at VGS = 10 mA |
| Power Dissipation at Ta | β | 3 W |
| Power Dissipation at Tc | β | 188 W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| Polarity | β | N-Channel |
| RoHS Status | β | Compliant (per LCSC listing) |