ISC011N04NM7VATMA1 vs BSC011N03LSTATMA1 Comparison
Detailed side-by-side comparison of ISC011N04NM7VATMA1 by Infineon and BSC011N03LSTATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC011N04NM7VATMA1 - 40V 1.1mΞ© OptiMOS 7 N-MOSFET | Infineon
ISC011N04NM7VATMA1 β ActiveSpecification Comparison
| Parameter | ISC011N04NM7VATMA1 | BSC011N03LSTATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Nrnd |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.41 | $1.55 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 Power-Transistor | β |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 40 V | 30 V |
| Continuous Drain Current (ID) at TA=25Β°C | 38 A | β |
| Continuous Drain Current (ID) at TC | 256 A | β |
| On-Resistance RDS(on) max @ VGS=10V | 1.1 mΞ© | β |
| Power Dissipation (TA) | 3 W | β |
| Power Dissipation (TC) | 136 W | β |
| Gate Threshold Voltage (Vth) | Up to 3.2 V | β |
| Technology | Trench MOSFET, silicon | Trench MOSFET |
| Package | PG-TDSON-8 (source-down) | PG-TDSON-8 FL (8-pin, exposed drain pad) |
| Mounting Type | Surface Mount | Surface Mount |
| Short-Circuit Withstand | Yes (current-limited) | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C (TJ) | β |
| RoHS Compliance | Compliant (per Infineon product page) | β |
| MSL Level | MSL 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Series | β | OptiMOS |
| Continuous Drain Current (ID) at TA=25C | β | 39 A |
| Continuous Drain Current (ID) at TC=25C | β | 100 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance RDS(on) max at VGS=10V | β | 1.1 mOhm (typical 0.9 mOhm) |
| Gate-Source Threshold Voltage VGS(th) typ | β | 2 V |
| Gate-Source Voltage (VGS) max | β | +/-20 V |
| Total Gate Charge (Qg) typ | β | 72 nC |
| Power Dissipation at TA=25C | β | 3 W |
| Power Dissipation at TC=25C | β | 115 W |
| Operating Junction Temperature | β | -55C to +150C |
| Configuration | β | Single with built-in diode |
| RoHS Status | β | Compliant |