ISC011N04NM7VATMA1 vs IAUC120N06S5N011ATMA1 Comparison
Detailed side-by-side comparison of ISC011N04NM7VATMA1 by Infineon and IAUC120N06S5N011ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC011N04NM7VATMA1
ISC011N04NM7VATMA1 - 40V 1.1mΞ© OptiMOS 7 N-MOSFET | Infineon
ISC011N04NM7VATMA1 β ActiveInfineon
IAUC120N06S5N011ATMA1 - 60V 1.1mΞ© OptiMOS-5 N-Ch MOSFET | Infineon
IAUC120N06S5N011ATMA1 β ActiveSpecification Comparison
| Parameter | ISC011N04NM7VATMA1 | IAUC120N06S5N011ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.41 | $1.62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 Power-Transistor | OptiMOS-5 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID) at TA=25Β°C | 38 A | β |
| Continuous Drain Current (ID) at TC | 256 A | β |
| On-Resistance RDS(on) max @ VGS=10V | 1.1 mΞ© | β |
| Power Dissipation (TA) | 3 W | β |
| Power Dissipation (TC) | 136 W | β |
| Gate Threshold Voltage (Vth) | Up to 3.2 V | β |
| Technology | Trench MOSFET, silicon | β |
| Package | PG-TDSON-8 (source-down) | PG-TDSON-8-53 (SSO8 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Short-Circuit Withstand | Yes (current-limited) | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C (TJ) | -55Β°C to +175Β°C (Tj) |
| RoHS Compliance | Compliant (per Infineon product page) | Compliant |
| MSL Level | MSL 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (Vdss) | β | 60 V |
| Continuous Drain Current (Id) | β | 120 A (Tc=25Β°C, Vgs=10V) |
| Pulsed Drain Current (Idm) | β | 310 A (Tj) |
| On-Resistance Rds(on) max | β | 1.1 mΞ© at Vgs=10 V |
| Gate-Source Voltage (Vgs) max | β | Β±20 V |
| Gate Threshold Voltage (Vgs(th)) | β | [DATA_NEEDED: Vgs(th) value] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg total value] |
| Power Dissipation (Pd) | β | 188 W (Tc=25Β°C) |
| Automotive Qualification | β | AEC-Q101 qualified |