ISC011N04NM7VATMA1 vs IAUCN08S7L110ATMA1 Comparison

Detailed side-by-side comparison of ISC011N04NM7VATMA1 by Infineon and IAUCN08S7L110ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC011N04NM7VATMA1 ISC011N04NM7VATMA1 - 40V 1.1mΞ© OptiMOS 7 N-MOSFET | Infineon

ISC011N04NM7VATMA1 - 40V 1.1mΞ© OptiMOS 7 N-MOSFET | Infineon

ISC011N04NM7VATMA1 βœ“ Active
Infineon
IAUCN08S7L110ATMA1 IAUCN08S7L110ATMA1 - 80V 11mΞ© N-Channel MOSFET | Infineon

IAUCN08S7L110ATMA1 - 80V 11mΞ© N-Channel MOSFET | Infineon

IAUCN08S7L110ATMA1 βœ“ Active

Specification Comparison

Parameter ISC011N04NM7VATMA1 IAUCN08S7L110ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.41 $0.46
Manufacturer Infineon Technologies β€”
Product Family OptiMOS 7 Power-Transistor β€”
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 40 V β€”
Continuous Drain Current (ID) at TA=25Β°C 38 A β€”
Continuous Drain Current (ID) at TC 256 A β€”
On-Resistance RDS(on) max @ VGS=10V 1.1 mΞ© β€”
Power Dissipation (TA) 3 W β€”
Power Dissipation (TC) 136 W β€”
Gate Threshold Voltage (Vth) Up to 3.2 V β€”
Technology Trench MOSFET, silicon OptiMOSβ„’ (Trench)
Package PG-TDSON-8 (source-down) PG-TDSON-8-34 (TDSON-8)
Mounting Type Surface Mount Surface Mount
Short-Circuit Withstand Yes (current-limited) β€”
Operating Temperature Range -55 Β°C to +175 Β°C (TJ) β€”
RoHS Compliance Compliant (per Infineon product page) β€”
MSL Level MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL level]
Drain-Source Voltage (V<sub>DS</sub>) β€” 80 V
Continuous Drain Current (I<sub>D</sub>, T<sub>j</sub>) β€” 50 A
Maximum Power Dissipation (P<sub>D</sub>, T<sub>C</sub>) β€” 58 W
R<sub>DS(on)</sub> (typ., V<sub>GS</sub>=10 V) β€” 11 mΞ©
Gate-Source Voltage (V<sub>GS</sub>) max β€” [DATA_NEEDED: V_GS_max]
Gate Threshold Voltage (V<sub>GS(th)</sub>) β€” [DATA_NEEDED: V_GS_th]
Total Gate Charge (Q<sub>G</sub>) β€” [DATA_NEEDED: Q_G_total]
Operating Junction Temperature β€” -55 Β°C to +175 Β°C
RoHS Status β€” Compliant
Automotive Qualified β€” Yes (AEC-Q101 expected per family)
Polarity β€” Single N-Channel
Configuration β€” Single

Datasheets & Resources

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