ISC011N06LM5ATMA1 vs BSC034N06NSATMA1 Comparison

Detailed side-by-side comparison of ISC011N06LM5ATMA1 by Infineon and BSC034N06NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC011N06LM5ATMA1

ISC011N06LM5ATMA1 - 60V 1.1mOhm OptiMOS 5 N-MOSFET | Infineon

ISC011N06LM5ATMA1 βœ“ Active
Infineon
BSC034N06NSATMA1

BSC034N06NSATMA1 - 60V 100A 3.4mOhm N-Ch MOSFET | Infineon

BSC034N06NSATMA1 βœ“ Active

Specification Comparison

Parameter ISC011N06LM5ATMA1 BSC034N06NSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.74 $0.65
Manufacturer Infineon Technologies β€”
Part Number ISC011N06LM5ATMA1 β€”
Technology OptiMOS 5 OptiMOS 5
Polarity / Channel Type N-Channel β€”
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID) at Ta 37 A β€”
Continuous Drain Current (ID) at Tc 288 A β€”
Power Dissipation (PD) at Ta 3 W β€”
Power Dissipation (PD) at Tc 188 W β€”
RDS(on) max at VGS=10V 1.15 mOhm β€”
Package PG-TDSON-8-17 (SuperSO8 5x6 mm) PG-TDSON-8-7 (SuperSO8 5x6 mm)
Mounting Type Surface Mount Surface Mount
Pin Count 8 β€”
Operating Temperature Range -55C to +175C -55C to +150C
RoHS Status Compliant Compliant
MSL Level [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL level]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] [DATA_NEEDED: VGS(th)]
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] [DATA_NEEDED: Qg]
Polarity β€” N-Channel
Gate-Source Voltage (VGS) β€” [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) at TC=25C β€” 100 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: IDM]
On-Resistance RDS(on) max at VGS=10V β€” 3.4 mOhm
On-Resistance RDS(on) max at VGS=4.5V β€” [DATA_NEEDED: RDS(on) at 4.5V]
Power Dissipation at Ta=25C β€” 2.5 W
Power Dissipation at Tc=25C β€” 74 W

Datasheets & Resources

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