ISC011N06LM5ATMA1 vs BSC0911NDATMA1 Comparison
Detailed side-by-side comparison of ISC011N06LM5ATMA1 by Infineon and BSC0911NDATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC011N06LM5ATMA1
ISC011N06LM5ATMA1 - 60V 1.1mOhm OptiMOS 5 N-MOSFET | Infineon
ISC011N06LM5ATMA1 β ActiveInfineon
BSC0911NDATMA1
BSC0911NDATMA1 - 25V Dual N-Channel MOSFET Array | Infineon
BSC0911NDATMA1 β ActiveSpecification Comparison
| Parameter | ISC011N06LM5ATMA1 | BSC0911NDATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.74 | $0.46 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | ISC011N06LM5ATMA1 | β |
| Technology | OptiMOS 5 | OptiMOS trench MOSFET |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 60 V | 25 V |
| Continuous Drain Current (ID) at Ta | 37 A | β |
| Continuous Drain Current (ID) at Tc | 288 A | β |
| Power Dissipation (PD) at Ta | 3 W | β |
| Power Dissipation (PD) at Tc | 188 W | β |
| RDS(on) max at VGS=10V | 1.15 mOhm | β |
| Package | PG-TDSON-8-17 (SuperSO8 5x6 mm) | PG-TISON-8 (8-PowerTDFN) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | β |
| Operating Temperature Range | -55C to +175C | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | [DATA_NEEDED: total gate charge] |
| Product Family | β | OptiMOS 25V |
| Configuration | β | Dual N-Channel (2 N-CH) |
| Continuous Drain Current (ID) | β | 18 A |
| Pulsed Drain Current (IDM) | β | 30 A |
| Power Dissipation (PD) | β | 1 W |
| Operating Temperature | β | -55C to +150C (junction) |
| Channel Type | β | N-Channel Enhancement Mode |
| Gate Threshold (VGS(th)) | β | [DATA_NEEDED: gate threshold voltage] |
| RDS(on) max @ VGS=10V | β | [DATA_NEEDED: RDS(on) at 10V VGS] |