ISC011N06LM5ATMA1 vs IPT067N20NM6ATMA1 Comparison
Detailed side-by-side comparison of ISC011N06LM5ATMA1 by Infineon and IPT067N20NM6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC011N06LM5ATMA1
ISC011N06LM5ATMA1 - 60V 1.1mOhm OptiMOS 5 N-MOSFET | Infineon
ISC011N06LM5ATMA1 β ActiveInfineon
IPT067N20NM6ATMA1
IPT067N20NM6ATMA1 - 200V 137A OptiMOS 6 Power MOSFET | Infineon
IPT067N20NM6ATMA1 β ActiveSpecification Comparison
| Parameter | ISC011N06LM5ATMA1 | IPT067N20NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.74 | $4.85 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | ISC011N06LM5ATMA1 | β |
| Technology | OptiMOS 5 | Trench-gate OptiMOS 6 silicon |
| Polarity / Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 60 V | 200 V |
| Continuous Drain Current (ID) at Ta | 37 A | β |
| Continuous Drain Current (ID) at Tc | 288 A | β |
| Power Dissipation (PD) at Ta | 3 W | β |
| Power Dissipation (PD) at Tc | 188 W | β |
| RDS(on) max at VGS=10V | 1.15 mOhm | β |
| Package | PG-TDSON-8-17 (SuperSO8 5x6 mm) | PG-HSOF-8-1 (8-pin + exposed tab) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | β |
| Operating Temperature Range | -55C to +175C | -55C to +150C (junction) |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL moisture sensitivity level] |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | β |
| Product Family | β | OptiMOS 6 |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA=25C | β | 15.3 A |
| Continuous Drain Current (ID) at TC=25C | β | 137 A |
| Power Dissipation (PD) at TA=25C | β | 3.8 W |
| Power Dissipation (PD) at TC=25C | β | 300 W |
| Gate-Source Voltage (VGS) | β | [DATA_NEEDED: max VGS rating] |
| On-Resistance RDS(on) typ | β | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Gate Charge (Qg) typ | β | [DATA_NEEDED: total gate charge] |
| Threshold Voltage VGS(th) | β | [DATA_NEEDED: VGS(th) typical value] |
| Lead-Free | β | Yes |
| Configuration | β | Single N-channel |