ISC011N06LM5ATMA1 vs IQE008N03LM5ATMA1 Comparison
Detailed side-by-side comparison of ISC011N06LM5ATMA1 by Infineon and IQE008N03LM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC011N06LM5ATMA1
ISC011N06LM5ATMA1 - 60V 1.1mOhm OptiMOS 5 N-MOSFET | Infineon
ISC011N06LM5ATMA1 β ActiveInfineon
IQE008N03LM5ATMA1
IQE008N03LM5ATMA1 - 30V 0.85mΞ© OptiMOS 5 N-Ch MOSFET | Infineon
IQE008N03LM5ATMA1 β ActiveSpecification Comparison
| Parameter | ISC011N06LM5ATMA1 | IQE008N03LM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.74 | $0.94 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | ISC011N06LM5ATMA1 | β |
| Technology | OptiMOS 5 | OptiMOS 5, Source-Down |
| Polarity / Channel Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID) at Ta | 37 A | β |
| Continuous Drain Current (ID) at Tc | 288 A | β |
| Power Dissipation (PD) at Ta | 3 W | β |
| Power Dissipation (PD) at Tc | 188 W | β |
| RDS(on) max at VGS=10V | 1.15 mOhm | β |
| Package | PG-TDSON-8-17 (SuperSO8 5x6 mm) | PG-TSON-8-4 (3.3 x 3.3 mm), Source-Down |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | β |
| Operating Temperature Range | -55C to +175C | -55Β°C to +150Β°C (typical MOSFET junction rating) |
| RoHS Status | Compliant | Compliant (per LCSC listing) |
| MSL Level | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL level] |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | 2 V (at 250 Β΅A per LCSC snippet) |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | β |
| Product Family | β | OptiMOS 5 |
| Drain-Source Voltage (VDS) Max | β | 30 V |
| Continuous Drain Current (ID) at TA=25Β°C | β | 27 A |
| Continuous Drain Current (ID) at TC=25Β°C | β | 253 A |
| On-Resistance RDS(on) Typical | β | 0.85 mΞ© (at 20 A, VGS=10 V per LCSC datasheet snippet) |
| Power Dissipation at TA=25Β°C | β | 2.1 W |
| Power Dissipation at TC=25Β°C | β | 89 W |
| Gate-Source Voltage (VGS) Max | β | Β±20 V (typical MOSFET rating) |