ISC015N03LF2SATMA1 vs ISC011N04NM7VATMA1 Comparison

Detailed side-by-side comparison of ISC015N03LF2SATMA1 by Infineon and ISC011N04NM7VATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
ISC015N03LF2SATMA1

ISC015N03LF2SATMA1 - 30V 214A OptiMOS N-Ch MOSFET | Infineon

ISC015N03LF2SATMA1 βœ“ Active
Infineon
ISC011N04NM7VATMA1

ISC011N04NM7VATMA1 - 40V 1.1mΞ© OptiMOS 7 N-MOSFET | Infineon

ISC011N04NM7VATMA1 βœ“ Active

Specification Comparison

Parameter ISC015N03LF2SATMA1 ISC011N04NM7VATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.96 $0.41
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOSβ„’ 2 (<= 40 V trench) OptiMOS 7 Power-Transistor
Channel Type N-Channel β€”
Drain-Source Voltage (VDS) 30 V 40 V
Continuous Drain Current (ID) at TA=25C 43 A β€”
Continuous Drain Current (ID) at TC=25C 214 A β€”
On-Resistance RDS(on) max at VGS=10V 1.5 mΞ© β€”
Gate Threshold Voltage VGS(th) 2.35 V β€”
Power Dissipation at TA=25C 3 W β€”
Power Dissipation at TC=25C 125 W β€”
Package PG-TDSON-8-62 (TDSON EP) PG-TDSON-8 (source-down)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +175C -55 Β°C to +175 Β°C (TJ)
RoHS Status Compliant β€”
Lead-Free Yes β€”
FET Type β€” N-Channel
Continuous Drain Current (ID) at TA=25Β°C β€” 38 A
Continuous Drain Current (ID) at TC β€” 256 A
On-Resistance RDS(on) max @ VGS=10V β€” 1.1 mΞ©
Power Dissipation (TA) β€” 3 W
Power Dissipation (TC) β€” 136 W
Gate Threshold Voltage (Vth) β€” Up to 3.2 V
Technology β€” Trench MOSFET, silicon
Short-Circuit Withstand β€” Yes (current-limited)
RoHS Compliance β€” Compliant (per Infineon product page)
MSL Level β€” MSL 1 (per JEDEC J-STD-020)

Datasheets & Resources

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