ISC015N03LF2SATMA1 vs ISC028N03LF2SATMA1 Comparison
Detailed side-by-side comparison of ISC015N03LF2SATMA1 by Infineon and ISC028N03LF2SATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
ISC015N03LF2SATMA1
ISC015N03LF2SATMA1 - 30V 214A OptiMOS N-Ch MOSFET | Infineon
ISC015N03LF2SATMA1 β ActiveInfineon
ISC028N03LF2SATMA1
ISC028N03LF2SATMA1 - 30V 2.8mOhm N-Ch MOSFET | Infineon OptiMOS
ISC028N03LF2SATMA1 β ActiveSpecification Comparison
| Parameter | ISC015N03LF2SATMA1 | ISC028N03LF2SATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.96 | $0.86 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOSβ’ 2 (<= 40 V trench) | OptiMOS 5 30V |
| Channel Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID) at TA=25C | 43 A | 24 A |
| Continuous Drain Current (ID) at TC=25C | 214 A | 128 A |
| On-Resistance RDS(on) max at VGS=10V | 1.5 mΞ© | 2.8 mOhm |
| Gate Threshold Voltage VGS(th) | 2.35 V | β |
| Power Dissipation at TA=25C | 3 W | β |
| Power Dissipation at TC=25C | 125 W | β |
| Package | PG-TDSON-8-62 (TDSON EP) | PG-TDSON-8-62 (5x6 mm) with exposed pad |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C | β |
| RoHS Status | Compliant | β |
| Lead-Free | Yes | β |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (VDS) max | β | 30 V |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Gate Threshold Voltage VGS(th) typ | β | 2.35 V |
| Power Dissipation at TA | β | 3 W |
| Power Dissipation at TC | β | 83 W |
| Operating Junction Temperature | β | -55 C to +175 C |
| RoHS / Lead-Free | β | Yes (RoHS compliant) |
| MSL Level | β | 1 (per JEDEC J-STD-020) |